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FUJI[Fuji Electric]
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| Part No. |
2SK3680-01
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| OCR Text |
...S=-30V
Operating and storage tch temperature range Tstg *1 See to Avalanche Current Graph *2 See to Avalanche Energy Graph *3 IF < -ID, -di/dt=50A/s, VCC < BVDSS, tch < 150C = = = Item Drain-source breakdown voltaget Gate threshold volta... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
109.36K /
4 Page |
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FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
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| Part No. |
2SK3679
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| OCR Text |
.../dt PD*@*--s c=25*Z PD @Ta=25*Z tch Tstg
unless otherwise specified)
Ratings 900 9 36 30 9 287.7 20 5 95 2.16 150 -55 * +150 Units V A A V A mJ *1
Symbols
kV/us kV/us *2 W W
This material and the information herein is the prope... |
| Description |
Fuji Power MOSFET SuperFAP-G series Target Specification
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| File Size |
28.28K /
1 Page |
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FUJI[Fuji Electric]
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| Part No. |
2SK3679-01MR
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| OCR Text |
...2.16 W 95 Operating and storage tch +150 C -55 to +150 temperature range Tstg C Isolation Voltage VISO *6 2 kVrms *1 L=6.51mH, Vcc=90V, tch=25C See to Avalanche Energy Graph *2 tch <150C = *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, tch < 150C ... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
115.76K /
4 Page |
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FUJI[Fuji Electric]
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| Part No. |
2SK3673-01MR
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| OCR Text |
...dt *4 dV/dt *3 PD Ta=25C Tc=25C tch Tstg Viso *6 Ratings 700 700 10 40 30 10 242.2 40 5 2.16 80 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/s W C C kVrms
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
< *1 L=4.45mH, Vc... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
111.27K /
4 Page |
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| Part No. |
RJK0455DPB-00-J5
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| OCR Text |
....08 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at l=10uh, tch = 25 c, rg 50 3. tc = 25 c
rjk0455dpb preliminary rej03g1878... |
| Description |
45 A, 40 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
160.17K /
7 Page |
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NEC[NEC]
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| Part No. |
2SK3664
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| OCR Text |
...e VDSS VGSS ID(DC) ID(pulse) PT tch Tstg 20 12 0.5 2.0 0.2 150 -55 to +150 V V A A W C C
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on ceramic substrate of 300 mm x 0.64 mm
Gate P... |
| Description |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWItchING
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| File Size |
135.24K /
6 Page |
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NEC[NEC]
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| Part No. |
2SK3663
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| OCR Text |
...dy Diode Drain
ID (pulse) PT tch Tstg
Total Power Dissipation Channel Temperature Storage Temperature
Gate Protection Diode
Source
Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on FR-4 board of 2500 mm x 1.1 mm Remark The di... |
| Description |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWItchING
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| File Size |
59.23K /
6 Page |
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it Online |
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