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ONSEMI[ON Semiconductor]
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| Part No. |
MGP11N60E_D ON1851 MGP11N60E ON1848
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
| Description |
From old datasheet system IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
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| File Size |
116.41K /
5 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGW21N60ED_D ON1926 MGW21N60ED ON1925
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Diode Thermal Resi...142 1.14 - 55 to 150 10 0.88 1.4 45 260 10 lbfSin (1.13 NSm)
Unit Vdc Vdc Vdc Adc Apk Watts W/C C... |
| Description |
IGBT IN TO-47 21 A @ 90 31 A @ 25 600 VOLTS From old datasheet system Insulated Gate Bipolar Transistor
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| File Size |
148.64K /
6 Page |
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it Online |
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MOTOROLA[Motorola, Inc] ON Semi Motorola, Inc.
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| Part No. |
MMDF2N05ZR2_D MMDF2N05ZR2 ON2162 ON2161
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| OCR Text |
...d ID = 0 6 Ad VGS = 10 Vdc Vdc, RG = 25 ) ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse R...142 4.6 -- -- -- nC ns (VDS = 15 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) Ciss Coss Crss -- -- -- 104 ... |
| Description |
From old datasheet system DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS Medium Power Surface Mount Products CONNECTOR ACCESSORY
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| File Size |
188.24K /
10 Page |
View
it Online |
Download Datasheet
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