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  rg rg Datasheet PDF File

For rg rg Found Datasheets File :: 39755    Search Time::1.594ms    
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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ...-30V 68 --- ID = -11A ns 15 --- rg = 18 29 --- RD = 2.5, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 570 --- VGS = 0V 360 --- pF VDS = -25V 65 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS IS...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...DD = -28V --- ID = -7.2A ns --- rg = 24 --- RD = 3.7, See Fig. 10 Between lead, nH 7.5 and center of die contact 350 --- VGS = 0V 170 --- pF VDS = -25V 92 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VS...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...D = -28V --- I D = -7.2A ns --- rg = 24 --- RD = 3.7, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings an...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...VDD = -30V --- ID = -18A ns --- rg = 12 --- RD = 1.5, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ... Starting TJ = 25C, L = 3.6mH rg = 25, I AS = -10A. (See Figure 12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. I SD -10...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ...DD = -28V --- I D = -10A ns --- rg = 13 --- RD = 2.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings an...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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    IRFI840G SIHFI840G SIHFI840G-E3 IRFI840GPBF

Vishay Siliconix
Part No. IRFI840G SIHFI840G SIHFI840G-E3 IRFI840GPBF
OCR Text ... starting TJ = 25 C, L = 31 mH, rg = 25 , IAS = 4.6 A (see fig. 12). c. ISD 8.0 A, dI/dt 100 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91161 S...
Description Power MOSFET

File Size 2,812.76K  /  8 Page

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    NJM2732 NJM2732D NJM2732E NJM2732M NJM2732RB1 NJM2732V

ETC
New Japan Radio
Part No. NJM2732 NJM2732D NJM2732E NJM2732M NJM2732RB1 NJM2732V
OCR Text ... 40 V /V =2.5V, GV=40dB RF=2k, rg=20, RL=2k, CL=0pF Gain Ta=-40C + - Voltage Gain/Phase vs. Frequency (with Capacitive load) V /V =2.5V, GV=40dB, RF=2k, rg=20, RL=2k, Ta=+25C + - 60 Gain 180 120 180 120 40 Voltage Gai...
Description DUAL OP-AMP, 5000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDIP8
Full-Swing Input and Output type Dual Operational Amplifier

File Size 338.93K  /  9 Page

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    IRFI840GLC SIHFI840GLC IRFI840GLCPBF SIHFI840GLC-E3

Vishay Siliconix
Part No. IRFI840GLC SIHFI840GLC IRFI840GLCPBF SIHFI840GLC-E3
OCR Text ... starting TJ = 25 C, L = 26 mH, rg = 25 , IAS = 4.5 A (see fig. 12). c. ISD 8.0 A, dI/dt 100 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91160 S...
Description Power MOSFET

File Size 1,663.22K  /  8 Page

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For rg rg Found Datasheets File :: 39755    Search Time::1.594ms    
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