| |
|
 |
Kersemi Electronic Co., Ltd.
|
| Part No. |
IRFU220N
|
| OCR Text |
...tance including effective c oss to simplify design, (see app. note an1001) l fully characterized avalanche voltage and current v dss r ds(on) max (m w) i d 200v 600 5.0a parameter max. units i d @ t c = 25c continuous d... |
| Description |
SMPS MOSFET
|
| File Size |
3,735.10K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Toshiba
|
| Part No. |
TK100L60W
|
| OCR Text |
...ruggedness symbol c iss c rss c oss c o(er) r g t r t on t f t off dv/dt test condition v ds = 300 v, v gs = 0 v, f = 100 khz v ds = 0 to 400 v, v gs = 0 v v ds = open, f = 1 mhz see figure 6.2.1 v dd = 0 to 400 v, i d = 25 a min ... |
| Description |
MOSFETs Silicon N-Channel MOS
|
| File Size |
270.37K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Kersemi Electronic Co., Ltd.
|
| Part No. |
IRFRU9120N
|
| OCR Text |
...itance CCC 350 CCC v gs = 0v c oss output capacitance CCC 110 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 70 CCC ? = 1.0mhz, see fig. 5 ? nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal... |
| Description |
Power MOSFET
|
| File Size |
1,916.59K /
10 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|