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MTE60N40 32M10 CTS122 MC3405D 2SJ40 SI5941DU ICL3223 TB0486A
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    ASM121Q3 ASM121

List of Unclassifed Manufacturers
ETC[ETC]
Part No. ASM121Q3 ASM121
OCR Text ... Voltage Range: +2.7 V to +3.6V Non-linearity: 0.8C 1.2mm x 1.5mm QFN Package 4 3 Top view, contacts underneath, actual part marking be...Self Heating 7 TA=+0C TA=+25C QFN-3 500 750 0.025 Notes: 4. Accuracy (expressed in C) = Di...
Description SIMISTOR TEMPERATURE SENSOR ULTRA-LOW-POWER SILICON THERMISTOR
SIMISTOR⑩ TEMPERATURE SENSOR ULTRA-LOW-POWER SILICON THERMISTOR

File Size 241.01K  /  8 Page

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    NSV45025AZT1G

ON Semiconductor
Part No. NSV45025AZT1G
OCR Text ...or 75% i reg(ss) . 3. i reg(p) non ? repetitive pulse test. pulse width t 300 sec. 4. f = 1 mhz, 0.02 v rms. thermal characteristics ...self biased transistor designed to regulate the current through itself and any devices in series wit...
Description Constant Current Regulator & LED Driver

File Size 172.79K  /  7 Page

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    K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S510432B-TC75 K4S510432B-TCL75 K4S511632B-TC75 K4S511632B-TCL75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S510432B-TC75 K4S510432B-TCL75 K4S511632B-TC75 K4S511632B-TCL75
OCR Text ...de Precharge standby current in non power-down mode Active standby current in power-down mode Active standby current in non power-down mode ...Self refresh current Symbol Burst length = 1 tRC tRC(min) IO = 0 mA CKE VIL(max), tCC = 10ns CKE ...
Description 512Mb B-die SDRAM Specification

File Size 147.30K  /  15 Page

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    K4S280432E K4S280432E-TL75 K4S280432E-TC75 K4S281632E-TL75 K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4S280432E K4S280432E-TL75 K4S280432E-TC75 K4S281632E-TL75 K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60
OCR Text ...de Precharge standby current in non power-down mode Active standby current in power-down mode Active standby current in non power-down mode ...Self refresh current Symbol Burst length = 1 tRC tRC(min) IO = 0 mA CKE VIL(max), tCC = 10ns CKE ...
Description 128Mb E-die SDRAM Specification 128Mb的电子芯片内存规

File Size 142.99K  /  14 Page

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    K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text ...de Precharge standby current in non power-down mode Active standby current in power-down mode Active standby current in non power-down mode ...Self refresh current ICC4 100 mA 1 ICC5 ICC6 180 3 1.5 mA mA mA 2 3 4 Not...
Description 16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II

File Size 205.22K  /  14 Page

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    K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text ...de Precharge standby current in non power-down mode Active standby current in power-down mode Active standby current in non power-down mode ...Self refresh current ICC4 100 mA 1 ICC5 ICC6 180 3 1.5 mA mA mA 2 3 4 Not...
Description 256Mb E-die SDRAM Specification 54pin sTSOP-II

File Size 196.59K  /  14 Page

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