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For non-continuous Found Datasheets File :: 32158 Search Time::1.938ms
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				ZETEX[Zetex Semiconductors] Diodes Incorporated
Part No.	ZHCS500 UZHCS500 ZHCS500TA
OCR Text	...eak Forward Current; D.C. = 50% Non Repetitive Forward Current t100s t10ms Power Dissipation at Tamb= 25 C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 40 500 550 1000 6.75 3 330 -55 to + 150 1...
Description	DIODE SCHOTTKY SOT-23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a> SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT SOT23 SILICON HIGH CURRENT 0.5 A, SILICON, SIGNAL DIODE High Current Schottky Diode
File Size	101.61K / 3 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors] Diodes Incorporated
Part No.	ZHCS506
OCR Text	...eak Forward Current; D.C. = 50% Non Repetitive Forward Current t100s t10ms Power Dissipation at Tamb= 25 C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 500 630 1000 5.5 2.5 330 -55 to + 150 ...
Description	High Current Schottky Diode SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a>
File Size	100.31K / 3 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors] Diodes Incorporated
Part No.	ZHCS750
OCR Text	...eak Forward Current; D.C. = 50% Non Repetitive Forward Current t100s t10ms Power Dissipation at Tamb= 25 C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 40 750 490 1500 12 5.2 500 -55 to + 150 1...
Description	High Current Schottky Diode SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT
File Size	165.10K / 3 Page	View it Online	Download Datasheet

				Diodes Incorporated ZETEX[Zetex Semiconductors]
Part No.	ZHCS756
OCR Text	...eak Forward Current; D.C. = 50% Non Repetitive Forward Current t100s t10ms Power Dissipation at Tamb= 25 C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 750 610 1500 12 5 500 -55 to + 150 125...
Description	SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a> High Current Schottky Diode SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT
File Size	161.16K / 3 Page	View it Online	Download Datasheet

				GEC Plessey Semiconductors ETC[ETC]
Part No.	ZN449D ZN449E ZN448E ZN448 ZN449
OCR Text	... three-state output. Readout is non-destructive. CONVERSION TIMING The ZN448/9 will accept a low-going CONVERT pulse, which can be compl...continuous conversion mode is shown in Fig.3b. As the BUSY output uses a passive pull-up the rise ti...
Description	8-bit microprocessor compatible A-D converter, linearity error 0.5 LSB
File Size	288.16K / 18 Page	View it Online	Download Datasheet

				Unisonic Technologies ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC
Part No.	ZXCM209 ZXCM209XF ZXCM210 ZXCM210LF ZXCM209M ZXCM209TF
OCR Text	...VCC < 1V. The resistor value is non critical: a value of 100k is recommended. For the ZXCM209 the resistor should be applied between reset output and ground: for the ZXCM210 between reset output and VCC. Figure 1 shows the connection diagra...
Description	Supply Monitor-Obsolete VERY LOW POWER MICROPROCESSOR RESET DEVICES IC-SM-3.08V RESET MONITOR 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
File Size	327.51K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] N.A. Champion Microelectronic Corporation
Part No.	CMT07N60 CMT0760FP
OCR Text	...te-to-Source Voltage Continue Non-repetitive Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25) Therma...
Description	POWER FIELD EFFECT TRANSISTOR
File Size	219.82K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	IRF730
OCR Text	... (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy CONDITIONS MIN. MAX. 290 UNIT mJ Unclamped inductive load, IAS = 4.8 A; tp =...Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reve...
Description	PowerMOS transistor Avalanche energy rated
File Size	55.04K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRSF3011
OCR Text	...ect pin-to-pin replacement from non-protected devices. Block Diagram As illustrated in figure A1, a zener diode between the input and the source provides the ESD protection for the input and also limits the voltage applied to the input ...
Description	FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=200mohm)
File Size	470.00K / 12 Page	View it Online	Download Datasheet

For non-continuous Found Datasheets File :: 32158 Search Time::1.938ms
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