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nitride silicon Datasheet PDF File

For nitride silicon Found Datasheets File :: 1784 Search Time::1.438ms
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				Cree, Inc
Part No.	CMPA2560025D
OCR Text	nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated elect...
Description	25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier
File Size	497.29K / 9 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPC2791TB UPC2791TB-E3 UPC2792TB UPC2792TB-E3
OCR Text	...cess. This process uses silicon nitride passivation film. The material can protect chip surface from external pollution and prevent corrosion/migration. Thus, these IC have excellent performance, uniformity and reliability. FEATURES * *...
Description	5 V SUPER MINIMOLD silicon MMIC VHF-UHF WIDEBAND AMPLIFIER 5 V, SUPER MINIMOLD silicon MMIC VHF-UHF WIDEBAND AMPLIFIER
File Size	111.39K / 20 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMPA2560025F-AMP CMPA2560025F-TB CMPA2560025F-15
OCR Text	nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electr...
Description	25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
File Size	839.29K / 11 Page	View it Online	Download Datasheet

				CREE
Part No.	CGHV27030S
OCR Text	nitride (gan) high electron mobilit y tr ansistor (he mt) which off ers high effciency , high gain and wide bandwidth capabilit...silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cr...
Description	GaN HEMT
File Size	1,746.87K / 26 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] http://
Part No.	INA-50311 INA-50311-BLK INA-50311-TR1
OCR Text	...icon bipolar process which uses nitride self-alignment submicrometer lithography, trench isolation, ion implantation, gold metallization, an...silicon RF integrated circuit amplifier with a 50 input and output. The INA-50311 uses resistive fe...
Description	1 GHz的硅单片低噪声放大器 1 GHz Low Noise silicon MMIC Amplifier
File Size	55.32K / 5 Page	View it Online	Download Datasheet


Part No.	DUT1505-AG
OCR Text	...on, silicon carbide and gallium nitride products of a similar specification. the device is able to function stably well above the maximu...silicon diodes lower and temperature independent dynamic recovery characteristics over the ...
Description	15 A, 500 V, GALLIUM ARSENIDE, RECTIFIER DIODE
File Size	488.90K / 6 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMPA2735075D
OCR Text	nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electro...
Description	75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
File Size	260.93K / 7 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPC1663 UPC1663G-E1 UPC1663GV-E1
OCR Text	...cess. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and relia...
Description	DC to VHF WIDEBAND DIFFERENTIAL INPUT AND OUTPUT AMPLIFIER IC
File Size	90.96K / 16 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	UPC2710TB UPC2710TB-E3
OCR Text	...cess. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliabil...
Description	122 x 32 pixel format, Compact LCD size 5 V, SUPER MINIMOLD silicon MMIC MEDIUM OUTPUT POWER AMPLIFIER
File Size	125.50K / 16 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPC2745 UPC2745TB UPC2745TB-E3 UPC2746TB UPC2746TB-E3
OCR Text	...cess. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these IC have excellent performance, uniformity and reliab...
Description	3 V, SUPER MINIMOLD silicon MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS
File Size	370.43K / 20 Page	View it Online	Download Datasheet

For nitride silicon Found Datasheets File :: 1784 Search Time::1.438ms
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