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  mos-1.9a Datasheet PDF File

For mos-1.9a Found Datasheets File :: 415    Search Time::1.485ms    
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    APT11058JFLL

Advanced Power Technology
Part No. APT11058JFLL
OCR Text MOS 7 (R) R FREDFET G S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. B...1 SO 2 T- 27 "UL Recognized" ISOTOP (R) * Increased Power Dissipation * Easier To ...
Description POWER MOS 7 FREDFET

File Size 162.81K  /  5 Page

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    H5N2901FN H5N2901FN-E

Renesas Electronics Corporation
Part No. H5N2901FN H5N2901FN-E
OCR Text MOS FET High Speed Power Switching REJ03G0372-0100Z Rev.1.00 May.28.2004 Features * Low on-resistance * Low leakage current * High speed switching Outline TO-220FN D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolu...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 101.47K  /  8 Page

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    NJU7704F NJU7705F3 NJU7704 NJU7704F3 NJU7705 NJU7705F

NJRC[New Japan Radio]
Part No. NJU7704F NJU7705F3 NJU7704 NJU7704F3 NJU7705 NJU7705F
OCR Text .... Open Drain and NJU7705 is a C-MOS output type. ! FEATURES " High Precision Detection Voltage 1.0% " Low Quiescent Current 0.9A typ. " Detection Voltage Range 1.56.0V(0.1V Step) " Adjustable delay time with external capacitor " Manual Rese...
Description VOLTAGE DETECTOR

File Size 61.56K  /  8 Page

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    APTM100H45SCTG

Microsemi Corporation
Part No. APTM100H45SCTG
OCR Text ...4A G3 S3 Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated *...1-7 APTM100H45SCTG - Rev 2 Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pu...
Description Full bridge Series & SiC parallel diodes MOSFET Power Module

File Size 297.13K  /  8 Page

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    APTM100H45SCT

Advanced Power Technology
Part No. APTM100H45SCT
OCR Text ...4A G3 S3 Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated *...1-7 APTM100H45SCT - Rev 1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS ...
Description Full bridge Series & SiC parallel diodes MOSFET Power Module

File Size 321.83K  /  7 Page

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    APTM100H45ST

Advanced Power Technology
Part No. APTM100H45ST
OCR Text ...C2 G4 S4 Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated -...1-6 APTM100H45ST - Rev 2 Max ratings 1000 18 14 72 30 450 357 18 50 2500 Unit V A V m W A m...
Description Full bridge Series & parallel diodes MOSFET Power Module

File Size 311.03K  /  6 Page

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    STD9N10-1 STD9N10T4 STD9N10

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STD9N10-1 STD9N10T4 STD9N10
OCR Text MOS TRANSISTOR Table 1. General Features Type STD9N10 STD9N10-1 VDSS 100 V 100 V RDS(on) < 0.27 < 0.27 ID 9A 9A STD9N10 STD9N10-1 Figure 1. Package FEATURES SUMMARY TYPICAL RDS(on) = 0.23 AVALANCHE RUGGED TECHNOLOG...
Description N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR N沟道100V 0.23欧姆- 9A条的DPAK /像是iPak功率MOS器件
N-CHANNEL 100V - 0.23 & - 9A DPAK/IPAK MOSFET TRANSISTOR

File Size 276.14K  /  12 Page

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    HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S20N35G3VLS9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S20N35G3VLS9A
OCR Text ...ption This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition...1.0 -40 to +175 260 6 Collector-Emitter Bkdn Voltage At 10mA, R GE = 1k. . . . . . . . . . . . . ...
Description 20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB
XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN

File Size 206.36K  /  8 Page

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