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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0917A
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| OCR Text |
...
June/2004
MGF0917A
freq. (MHz) 600 1000 1400 1800 2200 2600 3000 3400 3800 4200 4600 5000 5400 5800 6200 6600 7000 7400 7800 8200 8600...872 1.760 1.553 1.319 1.104 0.928 0.785
(ang) 146.73 130.91 115.76 101.60 88.63 76.98 66.64 57.57... |
| Description |
L & S BAND GaAs FET [ SMD non matched ]
L & S BAND GaAs FET [ SMD non - matched ]
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| File Size |
43.54K /
4 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MM908E425AIDWB 908E425
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| OCR Text |
...Using Internal Oscillator at 32 MHz (8.0 MHz Bus Frequency), SPI, ESCI, ADC Enabled STOP Mode (6) VSUP = 12 V, Cyclic Wake-Up Disabled DIGITAL INTERFACE RATINGS (ANALOG DIE) Output Pins RST_A, IRQ_A Low-State Output Voltage (IOUT = - 1.5 mA... |
| Description |
Integrated Quad Half H-Bridge with Power Supply, Embedded MCU, and LIN Serial Communication
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| File Size |
487.24K /
49 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MMG3012NT1
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| OCR Text |
...with frequencies from 0 to 6000 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small -signal RF. Features * Freq...872 173.141 172.602 171.41 170.357 169.626 168.366 167.117 166.034 164.864 163.824 162.689 161.228 1... |
| Description |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
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| File Size |
208.99K /
12 Page |
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it Online |
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Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF1511T1
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| OCR Text |
...lications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common source ...872 x 0.080 Microstrip 0.206 x 0.080 Microstrip Glass Teflon(R), 31 mils, 2 oz. Copper
TYPICAL CH... |
| Description |
RF Power Field Effect Transistor
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| File Size |
463.38K /
12 Page |
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MACOM[Tyco Electronics]
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| Part No. |
MRF177
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| OCR Text |
...ors
MRF177
100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET
N-Channel Enhancement Mode MOSFET
Designed for broadband commerc...872 0.869 0.863 0.861 0.836 0.828 0.821 0.815 0.816 0.816 0.808 0.800 0.790 0.770 0.749 0.739 0.797 ... |
| Description |
N-CHANNEL BROADBAND RF POWER MOSFET
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| File Size |
212.74K /
9 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S24140HSR3 MRF6S24140HR3
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| OCR Text |
...nal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications. * Typical CW Performance...872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MI... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
454.84K /
9 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRFG35003MT1
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| OCR Text |
...5 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 300 mWatt Power Gain -- 11....872 0.872 0.867 0.868 -160.58 -163.33 -166.03 -168.54 -170.64 -172.68 -174.56 -176.25 -177.90 -179.... |
| Description |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
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| File Size |
331.39K /
8 Page |
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CEL[California Eastern Labs]
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| Part No. |
NE552R479A-T1A-A NE552R479A
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| OCR Text |
...uency = 2.45 GHz Frequency = 1 MHz Vds = 3.0 V Idq = 200 mA
20 d 15 Ids
750
75
IMD,(dBC)
-30
IM3
IM5 -40
add
500...872 0.877 0.883 0.889 0.895 0.901 0.905 0.909 0.909 0.911 0.910 0.912 0.912 0.915 0.916 0.919 0.920 ... |
| Description |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
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| File Size |
392.01K /
9 Page |
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it Online |
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NEC[NEC]
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| Part No. |
NE552R679A-T1A NE552R679A NE552R679A-T1
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| OCR Text |
MHz 0.6 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed...872 0.871 0.871 0.870 0.869 0.868 0.867 0.865 Ang. -167.5 -167.9 -173.0 -175.0 -175.9 -176.8 -177.4 ... |
| Description |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
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| File Size |
59.39K /
9 Page |
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CEL[California Eastern Labs]
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| Part No. |
NE685M13-T3-A NE685M13
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| OCR Text |
...nce at VCB = 3 V, IE = 0, f = 1 MHz A A pF 0.4 UNITS GHz dB dB 7.0 75 MIN NE685M13 2SC5617 M13 TYP 12.0 1.5 11.0 140 0.1 0.1 0.7 2.5 MAX
...872 5.483 5.137 4.543 4.068 3.678 3.369 3.103 2.882 2.695 2.529 2.386 2.263 2.150 2.048 1.957 1.874 ... |
| Description |
NPN SILICON TRANSISTOR
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| File Size |
141.66K /
9 Page |
View
it Online |
Download Datasheet |
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