id-19a pdf Datasheet P15 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : MPSA5511 30PBF 41898 TDA9964 K2400E70 MBRS2 SCK130LP FDC2710
	Product Description
	Full Text Search

id-19a Datasheet PDF File

For id-19a Found Datasheets File :: 274 Search Time::0.968ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |

				IRF[International Rectifier]
Part No.	IRLI3103 2311
OCR Text	...SFET VDSS = 30V RDS(on) = 0.014 ID = 38A Absolute Maximum Ratings Parameter ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS EAS IA...19A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 34A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS...
Description	HEXFET Power MOSFET From old datasheet system HEXFET? Power MOSFET
File Size	150.05K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFI9540N
OCR Text	...-100V RDS(on) = 0.117 G S ID = -15A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to...19A -I D , D rain-to -S o urc e C urre nt (A ) 2.0 1.5 1.0 1 0.5 0.1 4 5 6 7 ...
Description	HEXFET Power MOSFET HEXFET? Power MOSFET
File Size	141.89K / 8 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TK19H50C
OCR Text	... : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k...19A 4 Common source VGS = 10 V Pulse Test Drain-source ON resistance 0.6 0.4 1 10 5 3...
Description	Switching Regulator Applications TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MOS VI) From old datasheet system
File Size	343.11K / 6 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFN38N100Q2
OCR Text	...IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 30 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1 ...19A 20 24 -50 -25 0 25 50 75 1 00 1 25 1 50 V DS - Volts TJ -...
Description	N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	561.81K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HUF75945P3 HUF75945G3 HUF75945S3ST
OCR Text	.... . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....19A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 38A, dISD/dt = 100A/s ISD = 38A, dI...
Description	38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs 38A 200V 0.071 Ohm N-Channel UltraFET Power MOSFETs 38A, 200V, 0.071 Ohm, N-Channel, UltraFETPower MOSFETs
File Size	206.61K / 10 Page	View it Online	Download Datasheet

				SAMHOP[SamHop Microelectronics Corp.]
Part No.	STD2555NL STU2555NL
OCR Text	... F E AT UR E S ( m W ) Max ID 19A R DS (ON) S uper high dense cell design for low R DS (ON). 43@ V G S = 10V 58@ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S ...
Description	N-Channel E nhancement Mode Field Effect Transistor
File Size	797.88K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IR
Part No.	IRFP4242PB IRFP4242PBF
OCR Text	...Maximum Ratings Parameter VGS ID @ TC = 25C ID @ TC = 100C IDM IRP @ TC = 100C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Source Voltage C...19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Id Vds Vgs L ...
Description	PDP MOSFET MOSFET的等离子
File Size	291.96K / 8 Page	View it Online	Download Datasheet

				International Rectifier IR
Part No.	IRFP4227PBF
OCR Text	...Maximum Ratings Parameter VGS ID @ TC = 25C ID @ TC = 100C IDM IRP @ TC = 100C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Source Voltage C...19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Id Vds Vgs L ...
Description	PDP SWITCH
File Size	298.12K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. Fairchild Semiconductor IRF[International Rectifier]
Part No.	IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL
OCR Text	... 200V RDS(on) max 0.054 ID 44A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance In...19A 26A BOTTOM RG 20V tp D .U .T IA S + V - DD 540 A 0 .0 1 360 Fig 12a. U...
Description	Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 44A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\|4A（丁）\|63AB HEXFET? Power MOSFET Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
File Size	132.03K / 11 Page	View it Online	Download Datasheet

				Advanced Analogic Technologies, Inc. ANALOGICTECH[Advanced Analogic Technologies]
Part No.	AAT9060INY-T1 AAT9060
OCR Text	... PWMSwitchTM VDS(MAX) = 30V ID(MAX)1 = 39A @ TC = 25C IAPP(MAX) = 12.5A in typical computer application Low RDS(ON): * 16 m @VGS = 10V *...19A VGS=10V, VDS=5V (Pulsed) VGS=VDS, ID=250A VGS=20V, VDS=0V VGS=0V, VDS=30V VGS=0V, VDS=30V, TJ=70...
Description	30V N-Channel Power MOSFET
File Size	129.44K / 6 Page	View it Online	Download Datasheet

For id-19a Found Datasheets File :: 274 Search Time::0.968ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |