| |
|
 |
SIEMENS AG
|
| Part No. |
hyb514400BJ-50- Q67100-Q756 Q67100-Q973 hyb514400BJ-60
|
| OCR Text |
hyb 514400BJ-50/-60
Advanced Information * 1 048 576 words by 4-bit organization * 0 to 70 C operating temperature * Fast Page Mode Operation * Performance: -50 -60 60 15 30 110 40 ns ns ns ns ns
tRAC tCAC tAA tRC tPC
RAS access ti... |
| Description |
RES 12K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM)
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
| File Size |
127.16K /
24 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
SIEMENS AG
SIEMENS A G
|
| Part No. |
Q67100-Q1094 hyb5117800BSJ-70
|
| OCR Text |
...-60/-70
semiconductor group 2 hyb 5117800bsj-50/-60/-70 2m x 8-dram the hyb 5117800bsj is a 16 mbit dynamic ram organized as 2097152 words by 8-bits. the hyb 5117800bsj utilizes a submicron cmos silicon gate process technology, as well a... |
| Description |
2M x 8-Bit Dynamic RAM
|
| File Size |
229.87K /
26 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS AG
|
| Part No. |
hyb514175BJ-50- Q67100-Q2100 hyb514175BJ-55 hyb514175BJ-60
|
| OCR Text |
hyb 514175BJ-50/-55/-60
Advanced Information * * * * 262 144 words by 16-bit organization 0 to 70 C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 55 ns (-55 version) 60 ns (-60 version) CAS access ... |
| Description |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
| File Size |
180.37K /
22 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS AG
|
| Part No. |
hyb514171BJ-50- Q67100-Q727 Q67100-Q2021 hyb514171BJ-60
|
| OCR Text |
hyb 514171BJ-50/-60
Advanced Information * * * * 262 144 words by 16-bit organization 0 to 70 C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) CAS access time: 15ns (-50, -60 ver... |
| Description |
256k x 16-Bit Dynamic RAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
| File Size |
184.28K /
23 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS A G
SIEMENS AG
http://
Siemens Semiconductor G...
|
| Part No. |
hyb5116405BJ-50 hyb5116405BJ-60 hyb5117405BJ-70 hyb5117405BT-70 Q67100-Q1098 hyb5116405BT-70 hyb5116405BT-60
|
| OCR Text |
...-50/-60/-70 4m x 4-edo dram the hyb 5116(7)405bj/bt is a 16mbit dynamic ram organized as 4194304 words by 4-bits. the hyb 5116(7)405bj/bt utilizes a submicron cmos silicon gate process technology, as well as advanced circuit techniques to... |
| Description |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24
POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88%
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
| File Size |
326.75K /
28 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS AG
Infineon Technologies AG
http://
|
| Part No. |
hyb3116400BJ-60 hyb3116400BJ-50 hyb3117400BJ-50 hyb3117400BJ-60 hyb3116400BJ-70 hyb3117400BJ-70 hyb3117400BT-60 hyb3116400BT-60 hyb3116400BTL-70 hyb3116400BT-70 hyb3116400BT-50
|
| OCR Text |
...-60/-70
semiconductor group 2 hyb 3116(7)400bj/bt(l) -50/-60/-70 3.3v 4mx4-dram the hyb 3116(7)400bj/bt is a 16mbit dynamic ram organized as 4194304 words by 4-bits. the hyb 3116(7)400bj/bt utilizes a submicron cmos silicon gate process t... |
| Description |
3.3V 4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 50 ns, PDSO26
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, TSOP2-26/24
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, SOJ-26/24
|
| File Size |
256.13K /
26 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
