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hdmostm Datasheet PDF File

For hdmostm Found Datasheets File :: 357 Search Time::0.859ms
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				IXYS Corporation
Part No.	IXGH24N60B
OCR Text	...ing capability * 3rd generation hdmostm process * MOS Gate turn-on - drive simplicity Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) Applications * * * * * AC motor speed co...
Description	HiPerFAST IGBT
File Size	136.75K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXGH24N60CD1 IXGT24N60CD1
OCR Text	... capability * Latest generation hdmostm process * MOS Gate turn-on - drive simplicity * Fast recovery expitaxial Diode (FRED) - soft recovery with low IRM Applications * PFC circuits * Uninterruptible power supplies (UPS) * Switched-mode an...
Description	Lightspeed Series HiPerFAST IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.5V??iPerFAST缁????????浣??(甯?????锛? Lightspeed Series HiPerFAST IGBT with Diode(VCES00V，VCE(sat).5V的HiPerFAST绝缘栅双极晶体管(带二极管 HiPerFAST IGBT with Diode Lightspeed Series
File Size	102.19K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXGH24N60C IXGT24N60C
OCR Text	... capability * Latest generation hdmostm process * MOS Gate turn-on - drive simplicity Applications * PFC circuits * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * AC motor speed control * DC servo an...
Description	Lightspeed Series HiPerFAST IGBT(VCES00V，VCE(sat).1V的HiPerFAST绝缘栅双极晶体管) HiPerFAST IGBT Lightspeed Series
File Size	52.58K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXSR35N120BD1
OCR Text	...ng capability Latest generation hdmostm process MOS Gate turn-on - drive simplicity Applications G = Gate, E = Emitter G C ISOPLUS 247TM E 153432 E Isolated backside* C = Collector, * Patent pending 50/60 Hz, RMS t = 1...
Description	IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)
File Size	70.92K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXSR40N60CD1
OCR Text	...ng capability Latest generation hdmostm process MOS Gate turn-on - drive simplicity Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight PLUS247 5 g Applications Symbol Test Conditions Characterist...
Description	IGBT with Diode ISOPLUS247
File Size	35.43K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTH36P10
OCR Text	... JEDEC TO-247 AD * Low RDS (on) hdmostm process 1.13/10 Nm/lb.in. 6 g * * * Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (<5 nH) - easy to drive and to protect Symbol ...
Description	Standard Power MOSFET
File Size	78.18K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXGH32N60BD1 IXGT32N60BD1
OCR Text	...handling capability HiPerFASTTM hdmostm process MOS Gate turn-on -drive simplicity Applications * Uninterruptible power supplies (UPS) * Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. ma...
Description	HiPerFAST IGBTwith Diode
File Size	68.62K / 2 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFK25N90 IXFK26N90 IXFX26N90 25N90 26N90 IXFX25N90
OCR Text	...tandard packages * Low RDS (on) hdmostm process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic rectifier Applications * DC-DC con...
Description	HiPerFET Power MOSFETs HiPerFET功率MOSFET
File Size	115.21K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFR15N80Q
OCR Text	...pacitance(<50pF) * Low RDS (on) hdmostm process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless o...
Description	HiPerFET Power MOSFETs ISOPLUS247 Q Class
File Size	31.94K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFR26N60Q
OCR Text	...pacitance(<30pF) * Low RDS (on) hdmostm process * Rugged polysilicon gate cell structure * Rated for Unclamped Inductive Load Switching (UIS) * Fast intrinsic Rectifier Applications * DC-DC converters * Battery chargers * Switched-mode and ...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs ISOPLUS247 Q-CLASS
File Size	33.86K / 2 Page	View it Online	Download Datasheet

For hdmostm Found Datasheets File :: 357 Search Time::0.859ms
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