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ADPOW[Advanced Power Technology]
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| Part No. |
SD1014-06
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| OCR Text |
... MHz 12.5 VOLTS POUT = 15 WATTS GP = 6.3 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The SD1014-06 is an epitaxial silicon NPN ...IB = 0 mA IC = 0 mA IE = 0 mA IC = 500 mA
36 18 4.0 --5
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------0.5 200
V V V ... |
| Description |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
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| File Size |
115.33K /
4 Page |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
SD1429-03
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| OCR Text |
GP = 7.5 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The SD1429-03 is a 12.5V epitaxial silicon NPN planar transistor designed ...IB = 0 V IC = 0 mA VBE = 0 mA IC = 500 A 36 16 4.0 --20
Value Typ.
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Max.
------5 ... |
| Description |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
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| File Size |
109.40K /
3 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
SD4012
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| OCR Text |
GP = 11.7 dB GAIN MINIMUM OVERLAY GEOMETRY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING REFRACTORY/GOLD METALIZATION
DESCRIPTION:
The SD...IB = 0 mA IE = 0 mA IC = 1 A 55 3.5 55 30 --10
Value Typ.
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Max.
--------1 150
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| Description |
RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS
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| File Size |
102.23K /
3 Page |
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it Online |
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TACHYONICS[Tachyonics CO,. LTD]
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| Part No. |
THN6601B
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| OCR Text |
... 6 POUT (dBm) 30
THN6601B
GP (dB) 11
C (%) 56
Output Power or Power Gain vs. Input Power
40 35 Output Power, POUT (dBm) 30 25 20 15 10 5 0 0 5 10 15 20 25 POUT 8 6 4 2 0 30 GP
f = 465 MHz, VCE = 6 V, ICQ = 5 mA
Power Gain ... |
| Description |
NPN SiGe RF TRANSISTOR
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| File Size |
277.57K /
7 Page |
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Philips Semiconductors
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| Part No. |
BLW85
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| OCR Text |
... 1,6-28 PL W 45 3-30 (P.E.P.) > Gp dB 4,5 > typ. 19,5 % 75 typ. 35 zi 1,4 + j1,5 - ZL 2,7-j1,3 - d3 dB - typ. -33
PIN CONFIGURATION
h...IB = 2,5 A Transition frequency at f = 100 -IE = 4 A; VCB = 12,5 V -IE = 12,5 A; VCB = 12,5 V Collec... |
| Description |
HF/VHF power transistor
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| File Size |
108.44K /
15 Page |
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it Online |
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Panasonic
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| Part No. |
2SA1254
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| OCR Text |
... E
600 VCB = -10 V Ta = 25C
GP IC
24 VCE = -10 V f = 100 MHz Ta = 25C 5
NF IE
VCB = -10 V f = 100 MHz Ta = 25C
Transition frequency fT (MHz)
500
20
4
400
16
Noise figure NF (dB)
-1 -10 -100
Power gain GP ... |
| Description |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others
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| File Size |
79.07K /
4 Page |
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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
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| Part No. |
BLW34
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| OCR Text |
...(1) W > typ. 1,8 2,15 > typ.
Gp dB 9 10,2
DESCRIPTION collector emitter base emitter
4 1 3
3 4
2 Top view
MBK187
Fig.1 Si...IB = 0,12 A Transition frequency at f = 500 MHz -IE = 0,6 A; VCB = 25 V -IE = 1,2 A; VCB = 25 V Coll... |
| Description |
UHF Linear power transistor(UHF 线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR
UHF Linear power transistor(UHF 线性功率晶体管)
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| File Size |
80.65K /
12 Page |
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it Online |
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