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  gate-emitter Datasheet PDF File

For gate-emitter Found Datasheets File :: 11126    Search Time::2.766ms    
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    CPU165MU

IRF[International Rectifier]
Part No. CPU165MU
OCR Text ...he same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a sta...Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Puls...
Description IGBT SIP MODULE Ultra-Fast IGBT

File Size 398.85K  /  8 Page

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    GA100TS60SQ

IRF[International Rectifier]
Part No. GA100TS60SQ
OCR Text ... Current Peak Switching Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 130C Max 600 220 100 440 440 20 2500 780 312 Units V ...
Description    HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

File Size 108.63K  /  7 Page

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    GA150TS60U

International Rectifier
Integrated Circuit Systems
Part No. GA150TS60U
OCR Text ...entR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 1...
Description HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT

File Size 221.41K  /  11 Page

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    GA200TS60U

IRF[International Rectifier]
Part No. GA200TS60U
OCR Text ...rent Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 2...
Description HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

File Size 299.60K  /  10 Page

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    GA250TS60U

IRF[International Rectifier]
Part No. GA250TS60U
OCR Text ...entR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 2...
Description 600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 226.75K  /  10 Page

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    GA75TS60U

IRF[International Rectifier]
Part No. GA75TS60U
OCR Text ...rent Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 7...
Description    HALF-BRIDGE IGBT INT-A-PAK

File Size 213.44K  /  10 Page

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    HGTG11N120CND

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG11N120CND
OCR Text .... . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 108.55K  /  8 Page

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    HGTG24N60D1D

INTERSIL[Intersil Corporation]
Part No. HGTG24N60D1D
OCR Text ...STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features * 24A, 600V * Latch Free Operation * Typical Fall Time <500ns * Low Conduction Loss * With Anti-Parallel Diode * tRR < 60ns Description The IGBT is a MOS ga...
Description 3.3V 36-mc CPLD
24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
24A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

File Size 35.26K  /  5 Page

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    HGTG24N60D1

INTERSIL[Intersil Corporation]
Part No. HGTG24N60D1
OCR Text GATE COLLECTOR (BOTTOM SIDE METAL) Features * 24A, 600V * Latch Free Operation * Typical Fall Time <500ns * High Input Impedance * Low C...Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 24A/ 600V N-Channel IGBT
24A, 600V N-Channel IGBT

File Size 32.04K  /  4 Page

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    HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGTH20N40C1D HGTH20N40E1D HGTH20N50C1D HGTH20N50E1D
OCR Text ...CTOR (FLANGE) EMITTER COLLECTOR GATE Features * 20A, 400V and 500V * VCE(ON) 2.5V Max. * TFALL 1s, 0.5s * Low On-State Voltage * Fast Switching Speeds * High Input Impedance * Anti-Parallel Diode Terminal Diagram Applications * Powe...
Description CAP 0.056UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 20 A, 400 V, N-CHANNEL IGBT, TO-218AC
20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

File Size 35.49K  /  6 Page

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For gate-emitter Found Datasheets File :: 11126    Search Time::2.766ms    
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