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g2.7 Datasheet PDF File

For g2.7 Found Datasheets File :: 10726 Search Time::1.328ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	S1D2507B01 KA2500 KA2507 S1D2500A S1D2507B
OCR Text	...tor 21 GOUT B1 5 G2 20 SOG Blue H1 6 B1 Enable SOG Block 19 CSYNC V1 7 + B2 or 18 DET 2.3V R2 8 H1 H Sync. 17 BOUT or GND3 9 H2 16 HOUT G2 10 V Sy...
Description	WIDE BAND ANALOG SWITCH FOR MONITORS Data Sheet
File Size	237.71K / 14 Page	View it Online	Download Datasheet

				Powerex Power Semiconductors
Part No.	CM600DU-12NFH
OCR Text	....21 5.3 ad 0.47 12.0 h h v g2 e2 e1 g1 c2e1 c1 x b w e u y a d p q q z k g ac ad z z c f m ab aa v m m l l g s - nuts (3 typ) t - (4 ty...7.0 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c *6 ...
Description	Dual IGBTMOD NFH-Series Module 600 Amperes/600 Volts
File Size	547.01K / 6 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	BB502M11 BB502MBS-TL-H
OCR Text	...tage v (br)g2ss +6 ? ? v i g2 = +10 a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss ? ? +100 na v g1s = +5 v, v g2s ...7 1.0 v v ds = 5 v, v g2s = 4 v i d = 100 a gate2 to source cutoff voltage v g2s(off) 0.5...
Description	Built in Biasing Circuit MOS FET IC UHF RF Amplifier
File Size	128.43K / 11 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	BB502CBS-TL-H BB502C11
OCR Text	...tage v (br)g2ss +6 ? ? v i g2 = +10 a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss ? ? +100 na v g1s = +5 v, v g2s ...7 1.0 v v ds = 5 v, v g2s = 4 v i d = 100 a gate2 to source cutoff voltage v g2s(off) 0.5...
Description	Built in Biasing Circuit MOS FET IC UHF RF Amplifier
File Size	135.71K / 11 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CM100DU-24H
OCR Text	G2 G2 U C1 G1 E1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V L M N TAB#110 t=0.5 P S R T ...7 3.150.01 1.89 0.94 0.28 0.67 0.91 0.91 0.43 0.71 0.16 Millimeters 94.0 80.00.25 48.0 24.0 7.0 17.0...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	44.26K / 4 Page	View it Online	Download Datasheet

				United Monolithic Semicondu... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
Part No.	CHA2066-99F_00 CHA2066
OCR Text	... form. A B C D E NC G1 7272 NC G2 Vd RFin RFout UMS Main Features Gain ( dB ) 20 18 16 14 12 10 8 6 4 2 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz ) 5 Noise Figure ( dB ) Broad band performance 10-16GHz...
Description	10-16GHz Low Noise Amplifier 10 - 16GHz的低噪声放大
File Size	126.72K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200DY-34A11
OCR Text	... e2 g1 e2 (es2) g2 di1 di2 tr1 tr2 c1 c2e1 e1 (es1) < igbt modules > cm200dy-34a high power switching use insulat...7.0 8.5 v i c =200 a (note.5) , t j =25 c - 2.2 2.8 v cesat collector-emitter saturation v...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	502.10K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BF998WR
OCR Text	...NNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION d 3 4 g2 g1 2 1 s,b Top view MAM198 Fig.1 ...7 Forward transfer admittance as a function of gate 1 voltage; typical values. Fig.8 Output...
Description	N-channel dual-gate MOS-FET
File Size	94.53K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BF908WR
OCR Text	...NNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION d 3 4 g2 g1 2 1 s,b Top view MAM198 Fig.1 ...7 30 0.6 1.5 MAX. 50 4 2.5 2.2 45 1.2 2.5 UNIT mS pF pF pF fF dB dB 1995 Apr 25 4 Philips S...
Description	N-channel dual-gate MOS-FET
File Size	102.92K / 7 Page	View it Online	Download Datasheet

For g2.7 Found Datasheets File :: 10726 Search Time::1.328ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |