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fet2-16 Datasheet PDF File

For fet2-16 Found Datasheets File :: 171 Search Time::2.281ms
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				NXP Semiconductors
Part No.	BUK9K6R8-40E
OCR Text	...static characteristics fet1 and fet2 r dson drain-source on-state resistance v gs = 5 v; i d = 10 a; t j = 25 c; fig. 11 - 6 7.2 m dynam...16 - 0.78 1.2 v t rr reverse recovery time - 23 - ns q r recovered charge i s = 10 a; di s /dt = -1...
Description	Dual N-channel 40 V, 7.2 mlogic level MOSFET
File Size	338.83K / 13 Page	View it Online	Download Datasheet

				SANYO
Part No.	FW360
OCR Text	... w allowable power dissipation (fet2), p d -- w drain-to-source voltage, v ds -- v drain current, i d -- a drain-to-source voltag...16 14 18 12 10 4 28 6 --10 -- 2 -- 1 -- 4 -- 3 -- 6 -- 5 v gs -- qg v ds = --50v i d = --2a p d (...
Description	Pch Nch
File Size	46.10K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7K12-60E
OCR Text	...static characteristics fet1 and fet2 r dson drain-source on-state resistance v gs = 10 v; i d = 10 a; t j = 25 c; fig. 11 - 7.64 9.3 m dy...16 - 0.78 1.2 v t rr reverse recovery time - 25 - ns q r recovered charge i s = 10 a; di s /dt = -1...
Description	Dual N-channel 60 V, 9.3 mstandard level MOSFET
File Size	325.39K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7K17-60E
OCR Text	...static characteristics fet1 and fet2 r dson drain-source on-state resistance v gs = 10 v; i d = 10 a; t j = 25 c; fig. 11 - 11.3 14 m dyn...16 - 0.78 1.2 v t rr reverse recovery time - 24.5 - ns q r recovered charge i s = 10 a; di s /dt = ...
Description	Dual N-channel 60 V, 14 mstandard level MOSFET
File Size	336.35K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7K18-40E
OCR Text	...static characteristics fet1 and fet2 r dson drain-source on-state resistance v gs = 10 v; i d = 10 a; t j = 25 c; fig. 11 - 15.5 19 m dyn...16 - 0.83 1.2 v t rr reverse recovery time - 16.8 - ns q r recovered charge i s = 10 a; di s /dt = ...
Description	Dual N-channel 40 V, 19 mstandard level MOSFET
File Size	308.55K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7K25-40E-15 BUK7K25-40E
OCR Text	...static characteristics fet1 and fet2 r dson drain-source on-state resistance v gs = 10 v; i d = 5 a; t j = 25 c; fig. 12 - 21.25 25 m dy...16 - 76 104 pf t d(on) turn-on delay time - 4.4 - ns t r rise time - 4.5 - ns t d(off) turn-off dela...
Description	Dual N-channel 40 V, 25 mstandard level MOSFET Dual N-channel TrenchMOS standard level FET
File Size	286.33K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7K35-60E
OCR Text	...static characteristics fet1 and fet2 r dson drain-source on-state resistance v gs = 10 v; i d = 5 a; t j = 25 c; fig. 11 - 24 30 m dynam...16 - 0.8 1.2 v t rr reverse recovery time - 18.5 - ns q r recovered charge i s = 5 a; di s /dt = -1...
Description	Dual N-channel 60 V, 30 mstandard level MOSFET
File Size	311.02K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7K52-60E
OCR Text	...static characteristics fet1 and fet2 r dson drain-source on-state resistance v gs = 10 v; i d = 5 a; t j = 25 c; fig. 11 - 35 45 m dynam...16 20 t mb (c) i d i d (a) (a) fig. 1. continuous drain current as a function of mounting base temp...
Description	Dual N-channel 60 V, 45 mstandard level MOSFET
File Size	301.48K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7K5R1-30E
OCR Text	...static characteristics fet1 and fet2 r dson drain-source on-state resistance v gs = 10 v; i d = 10 a; t j = 25 c; fig. 12 - 4.34 5.1 m dy...16 - 242 332 pf t d(on) turn-on delay time - 9.5 - ns t r rise time - 12.5 - ns t d(off) turn-off de...
Description	Dual N-channel 30 V, 5.1 mstandard level MOSFET
File Size	296.21K / 13 Page	View it Online	Download Datasheet

For fet2-16 Found Datasheets File :: 171 Search Time::2.281ms
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