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  diode.0a Datasheet PDF File

For diode.0a Found Datasheets File :: 12874    Search Time::1.86ms    
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    STS2301

SamHop Microelectronics Corp.
Part No. STS2301
OCR Text ...=125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S y...0A VGS = -2.5V, ID = -2.0A VGS =-1.8V, ID = -1.0A On-S tate Drain Current Forward Transconductance I...
Description P-Channel E nhancement Mode Field Effect Transistor

File Size 582.96K  /  7 Page

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    STD2HNK60Z STD2HNK60Z-1 STQ2HNK60ZR-AP STF2HNK60Z

ST Microelectronics
STMicroelectronics
Part No. STD2HNK60Z STD2HNK60Z-1 STQ2HNK60ZR-AP STF2HNK60Z
OCR Text ...ion withstand voltage (DC) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Maximum lead temperature for...0A 3 3.75 4.4 4.5 4.8 Table 5. Symbol gfs (1) Ciss Coss Crss Coss eq(2) Qg Qgs Qgd Dynamic...
Description 0.5 A, 600 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 TO-92, 3 PIN
N-channel 600V - 4.4楼? - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH垄芒 Power MOSFET
N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH?/a> Power MOSFET
N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET
N-channel 600V - 4.4ヘ - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH⑩ Power MOSFET

File Size 459.06K  /  16 Page

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    IRLR014NPBF IRLU014NPBF

International Rectifier
Part No. IRLR014NPBF IRLU014NPBF
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds...0A, di/dt 210A/s, VDD V(BR)DSS, TJ 175C 2 www.irf.com IRLR/U014NPbF 100 VGS VGS 15V 15...
Description HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14Ω , ID = 10A )
HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14ヘ , ID = 10A )

File Size 274.80K  /  11 Page

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    FQPF2N70

Fairchild Semiconductor
Part No. FQPF2N70
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) 140 2.0 2.8 4.5 28 0.22 -55 to +150 300 - Derate abo...0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 2.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25...
Description 700V N-Channel MOSFET

File Size 620.72K  /  8 Page

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    STS2620

SamHop Microelectronics Corp.
Part No. STS2620
OCR Text ...c=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S y...0A VGS = -2.5V, ID = -1.0A VDS = -5V, VGS = -4.5V VDS = -5V, ID = -2.0A Min Typ C Max Unit -20 1...
Description Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

File Size 808.33K  /  11 Page

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    IRG7PH37K10D

International Rectifier
Part No. IRG7PH37K10D
OCR Text ...=20v ? 60 i f @ t c = 25c diode continuous forward current 18 i f @ t c = 100c diode continuous forward current 10 v ge co...0a 2.4 i f = 6.0a, t j = 150c switching characteristics @ t j = 25c (unless otherwise sp...
Description 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247 package

File Size 784.08K  /  12 Page

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    WFP830

Wisdom technologies Int`l
Part No. WFP830
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 C) Derating Factor above 25 C Operating Junction Tempe...0A, VGS = 10 V ---- Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr...
Description N-Channel MOSFET

File Size 823.62K  /  7 Page

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    SI4435DY SI4435DYTR

IRF[International Rectifier]
Part No. SI4435DY SI4435DYTR
OCR Text ...Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Char...0A -I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C R DS(on) , Drain-to-Source On ...
Description -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=-30V Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm
SHROUD, PRIVACY; RoHS Compliant: Yes

File Size 81.44K  /  8 Page

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    SL486NADP SL486NAMP SL486

List of Unclassifed Manufacturers
ETC[ETC]
Part No. SL486NADP SL486NAMP SL486
OCR Text ... between an infra-red receiving diode and the digital input of remote control receiving circuits. The device contains two other circuit elem...0A ID = 100A ID = 0*5mA VCC = 5*0V, ID = 1*0A VCC = 4*5V, ID<1*5mA VCC = 18V, ID = 1*0A, VREGIN = 0V...
Description INFRA RED REMOTE CONTROL PREAMPLIFIER

File Size 196.98K  /  7 Page

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    SGP30N60 SGP30N6008 SGW30N60

Infineon Technologies AG
Infineon Technologies A...
Part No. SGP30N60 SGP30N6008 SGW30N60
OCR Text ...nergy losses include "tail" and diode reverse recovery. 44 34 291 58 0.64 0.65 1.29 53 40 349 70 0.77 0.85 1.62 mJ ns Symbol Conditions Valu...0A 10Hz TC=110C 10A 50s 200s 1ms 1A DC Ic 0.1A 1V 10V 100V 100Hz 1kHz 10kHz ...
Description Fast IGBT in NPT-technology

File Size 334.46K  /  12 Page

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For diode.0a Found Datasheets File :: 12874    Search Time::1.86ms    
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