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Fairchild Semiconductor, Corp.
Tripath Technology Inc.
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| Part No. |
FDP39N20
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| OCR Text |
...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
...40V, ID = 19.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
200 -----3.0 ------
Typ.
-0.2... |
| Description |
DIODE ZENER SINGLE 350mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-23 3K/REEL 39 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
852.40K /
8 Page |
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it Online |
Download Datasheet
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Diodes, Inc.
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| Part No. |
ZXMP4A57E6TA
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| OCR Text |
...continuous source current (body diode) (note 5) i s -2.6 a pulsed source current (body diode) (note 6) i sm -18 a therm...40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteri... |
| Description |
2.9 A, 40 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC PACKAGE-6
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| File Size |
655.76K /
8 Page |
View
it Online |
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Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
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| Part No. |
IRF1404ZS IRF1404ZL
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| OCR Text |
...ource current ??? ??? 75 (body diode) a i sm pulsed source current ??? ??? 750 (body diode) v sd diode forward voltage ??? ??? 1.3 v t r...40v, v gs = 0v v ds = 40v, v gs = 0v, t j = 125c v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = ... |
| Description |
AUTOMOTIVE MOSFET Advanced Process Technology
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| File Size |
4,677.82K /
12 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semicondu...
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| Part No. |
AON6276
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| OCR Text |
... gate-body leakage current body diode reverse recovery time turn-off delaytime turn-off fall time v gs =10v, v ds =40v, r l =2.0 w , r gen =3 w i f =20a, di/dt=500a/ m s turn-on rise time turn-on delaytime maximum body-diode continuous curr... |
| Description |
80V N-Channel AlphaSGT
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| File Size |
302.98K /
6 Page |
View
it Online |
Download Datasheet |
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