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For d.p.-s.t. Found Datasheets File :: 154612 Search Time::6.094ms
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				IRF[International Rectifier]
Part No.	IRF3007
OCR Text	D 42 Volts Automotive Electrical Systems Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed u...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 48A, VGS = 0V --- 85 130 ns TJ = 25C, IF = 48A, VD...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	146.42K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	...tching Fully Avalanche Rated D VDSS = 55V RDS(on) = 8.0m G S ID = 110A Description Advanced HEXFET(R) Power MOSFETs from Int...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 62A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 62A ---...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205 IRF3205PBF
OCR Text	...tching Fully Avalanche Rated D VDSS = 55V RDS(on) = 8.0m G S ID = 110A Description Advanced HEXFET(R) Power MOSFETs from Int...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 62A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 62A ---...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
File Size	91.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	D Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast Switching Full...P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = ...
Description	Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3315
OCR Text	D HEXFET(R) Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rate...p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 12A, VGS = 0V --- 174 260 ns TJ = 25C, IF = 12A --...
Description	Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
File Size	121.12K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415L IRF3415S
OCR Text	...tching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042 G ID = 43A S Description Fifth Generation HEXFETs from Internati...P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = ...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	152.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415
OCR Text	...tching Fully Avalanche Rated D VDSS = 150V G S RDS(on) = 0.042 ID = 43A Description Fifth Generation HEXFETs from Internationa...p-n junction diode. TJ = 25C, IS = 22A, VGS = 0V TJ = 25C, IF = 22A di/dt = 100A/s D S No...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	90.69K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3515L IRF3515S
OCR Text	.... Typ. Max. Units Conditions D MOSFET symbol 41 --- --- showing the A G integral reverse --- --- 164 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25A, VGS = 0V --- 200 300 ns TJ = 25C, IF = 25A --- 1.6 2.4 C di/dt = 100A/s Intrin...
Description	Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A) Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)
File Size	122.87K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	...3 120 275 V ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 76A, VGS = 0V TJ = 25C, IF = 76A, VDS = 16V di/dt = 100A/s 2 www.irf.com IRF3703 10000 I D , Drain-to-Source ...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text	... 45 --- 41 --- 50 Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = 35.5A, VGS = 0V TJ = 125C, IS = 35.5A, VGS = 0V TJ = 25C, IF = 35.5A, VR=20V di/dt = 100A/s TJ = 125C, IF = 35.5A, VR=20V...
Description	20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条? TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 77A I(D) \| TO-263AB
File Size	123.62K / 10 Page	View it Online	Download Datasheet

For d.p.-s.t. Found Datasheets File :: 154612 Search Time::6.094ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |