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Vishay Semiconductors
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| Part No. |
300U60A
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| OCR Text |
...rward voltage drop v fm i pk = 942 a, t j = 25 c 1.40 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating and storage temperature range t j , t stg - 65 to 200 c maximum therm... |
| Description |
Diode Switching 600V 300A 2-Pin DO-9
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| File Size |
138.82K /
7 Page |
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it Online |
Download Datasheet
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MACOM[Tyco Electronics]
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| Part No. |
MRF151A
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| OCR Text |
...0.960 0.957 0.954 0.950 0.946 0.942 0.936 0.932 0.925 0.918 0.912 0.902 0.895 0.886 0.877 |S11|
S11
Table 1. Common Source S-Parameters (VDS = 50 V, ID = 2 A)
-180
-180
-179
-179
-178
-178
-177
-177
-177
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| Description |
The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET
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| File Size |
278.41K /
8 Page |
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it Online |
Download Datasheet
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
PD432406 PD4306 PD432006 PD432206
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| OCR Text |
...0 1330 1220 1110 1178 1100 1020 942 864 785 750 700 650 600 550 500 50,890 46,400 33,925 30,935 44,250 40,350 29,500 26,900 23,690 18,615 3....t for Fusing for One Cycle Tj = 125C, Vr = Vrrm Maximum Rate-of-Rise of On-State Current, (Non-Repet... |
| Description |
POW-R-BLOK Dual SCR Isolated Module (600 Amperes / Up to 2400 Volts)
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| File Size |
98.54K /
5 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD30HUF1
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| OCR Text |
...0.913 0.916 0.928 0.932 0.936 0.942 0.945 0.946 0.952 0.955 0.955 0.957 S22 (ang) -170.2 -172.5 -173.9 -175.6 -177.6 -179.7 178.3 176.3 174.2 173.4 172.3 170.5 168.6 166.7 164.9 163.1 161.6 160.0 158.2 157.0 155.4 153.6
RD30HUF1
MITSU... |
| Description |
Silicon MOSFET Power Transistor/520MHz/30W Silicon MOSFET Power Transistor,520MHz,30W
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| File Size |
386.46K /
7 Page |
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it Online |
Download Datasheet
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Price and Availability
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