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  8m cl Datasheet PDF File

For 8m cl Found Datasheets File :: 927    Search Time::1.641ms    
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    SAMSUNG
Part No. K4H561638F
OCR Text ...F-die (x8, x16) DDR SDRAM 8m x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks Double Data Rate SDRAM General Description The K4H560838F / K4H...cl=2 at tCK=10ns for DDR200, cl=2 at 7.5ns for DDR266(A2), cl=2.5 at 7.5ns for DDR266(B0), 6ns for D...
Description DDR SDRAM 256Mb F-die

File Size 203.41K  /  23 Page

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    K4H561638F K4H561638F-TC_LB3 FMB857B K4H560838F-TC_LA2 K4H560838F-TC_LAA K4H560838F-TC_LB0 K4H560838F-TC_LB3 K4H561638F-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H561638F K4H561638F-TC_LB3 FMB857B K4H560838F-TC_LA2 K4H560838F-TC_LAA K4H560838F-TC_LB0 K4H560838F-TC_LB3 K4H561638F-TC_LA2 K4H561638F-TC_LAA K4H561638F-TC_LB0 K4H560838F-TC/LA2 K4H560838F-TC/LAA K4H560838F-TC/LB0 K4H560838F-TC/LB3 K4H561638F-TC/LA2 K4H561638F-TC/LAA K4H561638F-TC/LB0 K4H561638F-TC/LB3
OCR Text ...F-die (x8, x16) DDR SDRAM 8m x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks Double Data Rate SDRAM General Description The K4H560838F / K4H...cl=2 at tCK=10ns for DDR200, cl=2 at 7.5ns for DDR266(A2), cl=2.5 at 7.5ns for DDR266(B0), 6ns for D...
Description 256Mb F-die DDR SDRAM Specification

File Size 326.57K  /  23 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH8S72PHC-7 B99011 MH8S72PHC-8 MH8S72PHC-10
OCR Text ...e Utilizes industry standard 8m x 16 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP 168-pin (84-pin dual in-line package) ...cl). -7,-8,-10 -7,-8 -10 SPD enrty data 128 256 Bytes SDRAM A0-A11 A0-A8 1BANK x72 0 LVTTL 10ns 6...
Description From old datasheet system
603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM

File Size 585.65K  /  55 Page

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    HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K HY5DU561622DLTP-X HY5DU561622DTP-K HY5DU561622DTP-L HY5DU561622DTP-M HY

HYNIX[Hynix Semiconductor]
Part No. HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K HY5DU561622DLTP-X HY5DU561622DTP-K HY5DU561622DTP-L HY5DU561622DTP-M HY5DU561622DLTP-L HY5DU561622DTP-J HY5DU561622DTP-X HY5DU56422DLTP HY5DU56422DLTP-H HY5DU56422DLTP-J HY5DU56422DLTP-K HY5DU56422DLTP-L HY5DU56422DLTP-M HY5DU56422DLTP-X HY5DU56422DTP HY5DU56422DTP-H HY5DU56422DTP-J HY5DU56422DTP-K HY5DU56422DTP-L HY5DU56422DTP-M HY5DU56422DTP-X HY5DU56822DLTP HY5DU56822DLTP-H HY5DU56822DLTP-J HY5DU56822DLTP-K HY5DU56822DLTP-L HY5DU56822DLTP-M HY5DU56822DLTP-X HY5DU56822DTP HY5DU56822DTP-H HY5DU56822DTP-J HY5DU56822DTP-K HY5DU56822DTP-M HY5DU56822DTP-X HY5DU561622DLTP-H HY5DU561622DLTP-J HY5DU561622DLTP-M HY5DU561622DTP-H HY5DU56822DTP-L HY5DU561622DLT-J
OCR Text ..., A11 BA0, BA1 A10 8K 32Mx8 8m x 8 x 4banks A0 - A12 A0-A9 BA0, BA1 A10 8K 16Mx16 4M x 16 x 4banks A0 - A12 A0-A8 BA0, BA1 A10 8K ...cl=2) : tCK = 10ns, cl2, BL=2, tRCD = 2*tCK, tRC = 10*tCK, tRAS = 5*tCK Read : A0 N R0 N N P0 N A0 N...
Description DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)

File Size 392.03K  /  37 Page

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    KM23V8105D KM23V8105DG KM23V8105G

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23V8105D KM23V8105DG KM23V8105G
OCR Text 8m-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES * Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) * Random access t...cl=100pF READ CYclE Item Read Cycle Time Chip Enable Access Time Address Access Time Page Addres...
Description 8m-Bit (1Mx8 /512Kx16) CMOS MASK ROM

File Size 88.59K  /  5 Page

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    HY5DU28822BT-X HY5DU28822BT HY5DU28822BLT-X HY5DU28822BLT HY5DU28422BLT HY5DU28422BLT-X HY5DU28422BT HY5DU28422BT-X HY5D

HYNIX[Hynix Semiconductor]
Part No. HY5DU28822BT-X HY5DU28822BT HY5DU28822BLT-X HY5DU28822BLT HY5DU28422BLT HY5DU28422BLT-X HY5DU28422BT HY5DU28422BT-X HY5DU28422BT-H HY5DU28822BT-H HY5DU28422BT-J HY5DU28822BT-J HY5DU28422BT-M HY5DU28822BT-M HY5DU28422BT-K HY5DU28822BT-K HY5DU28822BT-L
OCR Text ...recharge Flag Refresh 32Mx4 8m x 4 x 4banks A0 - A11 A0-A9, A11 BA0, BA1 A10 4K 16Mx8 4M x 8 x 4banks A0 - A11 A0-A9 BA0, BA1 A10 4K...cl=2) : tCK = 10ns, cl2, BL=2, tRCD = 2*tCK, tRAS = 5*tCK Read : A0 N R0 N N P0 N A0 N - repeat the ...
Description DDR SDRAM - 128mb
128m-S DDR SDRAM

File Size 329.98K  /  33 Page

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    KM44S32030BT-G_FA KM44S32030BT-G_FH KM44S32030BT-G_FL KM44S32030BT-G/F10 KM44S32030BT-G/FH KM44S32030BT-G/F8 KM44S32030B

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
Part No. KM44S32030BT-G_FA KM44S32030BT-G_FH KM44S32030BT-G_FL KM44S32030BT-G/F10 KM44S32030BT-G/FH KM44S32030BT-G/F8 KM44S32030BT-G/FA KM44S32030BT-G/FL KM44S32030BT-G80
OCR Text 8m x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or speci...cl=2 in DC characteristics in datasheet. * Define a new parameter of tDAL( 2clK +20ns), Last data in...
Description 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
128mbit SDRAM 8m x 4Bit x 4 Banks Synchronous DRAM LVTTL 128mbit SDRAM米4位4银行同步DRAM LVTTL

File Size 133.65K  /  11 Page

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    http://
AMICC[AMIC Technology]
AMIC Technology Corporation
AMIC Technology, Corp.
Part No. A23L26161 A23L2616 A23L2616V-70 A23L2616V-100 A23L2616R-70 A23L2616R-100 A23L2616M-70 A23L2616M-100 A23L26161V-70 A23L26161V-100
OCR Text 8m X 8 BIT CMOS MASK ROM Revision History Rev. No. 0.0 4M X 16 / 8m X 8 BIT CMOS MASK ROM History Initial issue Issue Date Sept...cl = 100pF A23L2616/A23L26161-100 2.7V~3.6V 0.4V to 2.4V 10 ns VIN = 1.4V, VOUT = 1.4V 1 TTL gate an...
Description Power Resistor; Series:MK; Resistance:20kohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C
4M X 16 / 8m X 8 BIT CMOS MASK ROM 4米16 / 8米8位CMOS掩膜ROM
Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle 4米16 / 8米8位CMOS掩膜ROM

File Size 120.61K  /  11 Page

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    HY5DU561622DLT HY5DU561622DT HY5DU56422DLT HY5DU56422DT HY5DU56822DT HY5DU56822DLT HY5DU56422DLT-J HY5DU56822DLT-J HY5DU

Hynix Semiconductor
Part No. HY5DU561622DLT HY5DU561622DT HY5DU56422DLT HY5DU56422DT HY5DU56822DT HY5DU56822DLT HY5DU56422DLT-J HY5DU56822DLT-J HY5DU561622DLT-H
OCR Text ...0-A9, A11 BA0, BA1 A10 8K 32Mx8 8m x 8 x 4banks A0 - A12 A0-A9 BA0, BA1 A10 8K 16Mx16 4M x 16 x 4banks A0 - A12 A0-A8 BA0, BA1 A10 8K Rev...cl=2): tCK = 10ns, cl2, BL=2, tRCD = 2*tCK, tRC = 10*tCK, tRAS = 5*tCK Read: A0 N R0 N N P0 N A0 N -...
Description DDR SDRAM - 256Mb
256Mb DDR SDRAM

File Size 216.31K  /  29 Page

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    HY5756820C HY57V56820CLT-P HY57V56820CT-H HY57V56820CT-P HY57V56820CT-S HY57V56820CLT-6 HY57V56820CT HY57V56820CT-8 HY57

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
Part No. HY5756820C HY57V56820clT-P HY57V56820CT-H HY57V56820CT-P HY57V56820CT-S HY57V56820clT-6 HY57V56820CT HY57V56820CT-8 HY57V56820CT-K HY57V56820CT-6 HY57V56820clT-8 HY57V56820clT-H HY57V56820clT-K HY57V56820clT-S
OCR Text 8m x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory appli...cl 2.4/0.4 1.4 1 1.4 50 V V ns V pF 1 Note : 1. Output load to measure access time is equiv...
Description 4 Banks x 8m x 8Bit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
SDRAM - 256Mb

File Size 75.83K  /  12 Page

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For 8m cl Found Datasheets File :: 927    Search Time::1.641ms    
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