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For 8.25m Found Datasheets File :: 2069 Search Time::3.594ms
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				United Monolithic Semicondu... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
Part No.	CHA2093RBF CHA2093RBF_24 CHA2093RBF/24
OCR Text	...HA2093RBF2057 -26-Feb.-02- 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33...
Description	20-30GHz Low Noise Amplifier 20 - 30GHz的低噪声放大
File Size	184.01K / 8 Page	View it Online	Download Datasheet

				United Monolithic Semicondu... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
Part No.	CHA2093 CHA2093-99F_00 CHA2093-99F/00
OCR Text	...B ) 10 Noise Figure ( dB ) 9 8 7 6 5 4 3 2 1 0 10 15 20 25 30 35 40 Frequency ( GHz ) Main Features Broad band performance 20-30GHz 2.2dB noise figure, 20-30GHz 15dB gain, 0.5dB gain flatness Low DC power consumption, 50mA 20dB...
Description	20-30GHz Low Noise Amplifier Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 20 - 30GHz的低噪声放大
File Size	106.09K / 8 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors GmbH UMS[United Monolithic Semiconductors]
Part No.	CHA5093 CHA5093-99F_00 CHA5093-99F/00
OCR Text	...f. : DSCHA50930129 -09 May-00 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departem...25m diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 100m. All di...
Description	Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 22 - 26GHz高功率放大器 22-26GHz High Power Amplifier
File Size	158.56K / 8 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLC157XP
OCR Text	...Condition Rating 15 -5 Tc = 25C 8.3 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation...25m Dia Au wire) n=2 (0.3mm length, 25m Dia Au wire) Download S-Parameters, click here Source ...
Description	GaAs FET & HEMT Chips
File Size	55.15K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLK057XV
OCR Text	... 150 200 2 4 6 8 10 Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER VDS=10V 27 IDS0...25m Dia Au wire) n=2 (0.2mm length, 25m Dia Au wire) Download S-Parameters, click here 3 FL...
Description	GaAs FET & HEMT Chips
File Size	53.79K / 4 Page	View it Online	Download Datasheet

				FUJITSU[Fujitsu Media Devices Limited]
Part No.	FMM5701LG
OCR Text	...FREQUENCY VDD=5V, ID=12mA 9 8 18 16 Gas 14 Noise Figure (dB) 7 6 5 4 3 2 1 15 16 17 18 19 20 21 22 10 8 6 NF 4 2 23 24 25 26...25m Dia Au wire) RF OUT n=1 (0.3mm length, 25m Dia Au wire) GND n=6 (0.3mm length, 25m Dia Au wire) ...
Description	LNA MMIC
File Size	73.87K / 6 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited] Fujitsu Component Limited.
Part No.	FMM5701X
OCR Text	...(2) Min. Limits Typ. Max. 1.5 1.8 Unit Noise Figure NF VDD = 5V ID=12mA f=24GHz dB Associated Gain Gas f=24GHz 12.0 ...25m Dia Au wire) RF OUT n=1 (0.3mm length, 25m Dia Au wire) GND n=6 (0.3mm length, 25m Dia Au wire) ...
Description	24GHz Low Noise Amplifier MMIC
File Size	147.87K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group Infineon
Part No.	HYB39S16160CT-7 HYB39S16160CT-6
OCR Text	...ax @ CL=2 tCK2 tAC2 166 6 5 125 8 6 -7 143 7 5.5 115 9 6 Units MHz ns ns MHz ns ns * * * * * * * * full page(optional) for sequencial ...25m process and organized as 2 banks x 512kbit x 16. These synchronous devices achieve high speed da...
Description	1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications
File Size	138.03K / 15 Page	View it Online	Download Datasheet

				CET[Chino-Excel Technology]
Part No.	CED6060R CEU6060R
OCR Text	...roduction testing. 40 VGS=10,8,7V 35 6V 40 TJ=125 C 25 C 30 ID, Drain Current(A) 25 VGS=5V 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 4V ID, Drain Current (A) 30 20 10 -55 C 0 2 3 4 5 6 7 8 VDS, Drain-to-Source Voltag...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	40.15K / 5 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	JANSR2N7294 FN4292
OCR Text	...D/dt = 100A/s MIN 0.6 TYP MAX 1.8 1700 UNITS V ns 2-24 JANSR2N7294 Electrical Specifications up to 100K RAD PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Sou...
Description	23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFET 23A, 200V, 0.115 Ohm, Rad Hard,N-Channel Power MOSFET From old datasheet system 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET
File Size	47.67K / 7 Page	View it Online	Download Datasheet

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