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| Part No. |
K3N3C1000D-DC10
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| OCR Text |
...hable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) fast access time : 80ns(max.) supply voltage : single +5v c...bit(byte mode) or as 262,144 x 16 bit(word mode) depending on bhe voltage level.(see mode selection ... |
| Description |
256K X 16 MASK PROM, 100 ns, PDIP40
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| File Size |
47.69K /
3 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
KM23C4100D KM23C4100DG SAMSUNGSEMICONDUCTORCO.LTD.-KM23C4100DG
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| OCR Text |
...hable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) fast access time : 80ns(max.) supply voltage : single +5v c...bit(byte mode) or as 262,144 x 16 bit(word mode) depending on bhe voltage level.(see mode selection ... |
| Description |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位12Kx8 / 256Kx16）的CMOS掩模ROM分位12Kx8 / 256Kx16）的CMOS掩膜光盘
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| File Size |
76.96K /
4 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM23C4200D
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| OCR Text |
...q 15 q 14 q 13 q 12 q 11 q 10 q 8 q 9 v ss q 7 q 6 q 5 q 4 q 3 q 2 q 1 a 1 a 2 a 3 a 7 a 4 a 5 a 6 dip 1 2 40 39 3 4 38 37 5 6 36 35 7 ...bit organization fast access time : 80ns(max.) supply voltage : single +5v current consumpti... |
| Description |
4M-Bit (256Kx16) CMOS Mask ROM (EPROM Type)(4M(256Kx16) CMOS掩膜ROM)
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| File Size |
57.68K /
4 Page |
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Rochester Electronics, LLC
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| Part No. |
AM27C4096-15JC
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| OCR Text |
...diagrams top view 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 v pp ce ( ...bit) cmos uv eprom am27c4096 -95 d c valid combinations valid combinations list configurations plann... |
| Description |
IC-SM-4MB CMOS PROM 集成电路MB的的CMOS胎膜早破
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| File Size |
86.18K /
11 Page |
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it Online |
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Integrated Device Technology, Inc.
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| Part No. |
IDT72T20128L10BBI IDT72T2098L10BBI IDT72T20128L6BBI IDT72T20128L7BB
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| OCR Text |
8 ? 2003 integrated device technology, inc. all rights reserved. product specifications subject to change without notice. idt and the idt lo...bit/10-bit configuration 32,768 x 20/65,536 x 10, 65,536 x 20/131,072 x 10 131,072 x 20/262,144 x ... |
| Description |
2.5 VOLT HIGH-SPEED TeraSyncDDR/SDR FIFO 20-BIT/10-BIT CONFIGURATION 2.5伏高速TeraSync⑩复特别提款权先进先0-BIT/10-BIT配置
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| File Size |
496.21K /
51 Page |
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it Online |
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Renesas
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| Part No. |
M6MGB32BS4WG
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| OCR Text |
...
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8.0 mm F-VCC S-VCC F-GND S-GND A0-A17 F-A18-F-A20 DQ0-DQ15 F-CE# S-CE1# S-CE2 : VC...BIT (2,097,152-WORD BY 16-BIT) CMOS FLASH MEMORY 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM St... |
| Description |
CMOS SRAM
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| File Size |
90.43K /
3 Page |
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it Online |
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TI store
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| Part No. |
TMS27PC040
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| OCR Text |
8-bit uv erasable tms27pc020 262144 by 8-bit programmable read-only memories smls020c november 1990 revised september 1997 1 post office box 1443 ? houston, texas 772511443 organizatio n...262144 by 8 bits single 5-v power supply... |
| Description |
<font color=red>[Old version datasheet]</font> READ-ONLY MEMORIES
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| File Size |
195.00K /
15 Page |
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it Online |
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Price and Availability
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