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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CPS057
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| OCR Text |
... PASSIVATED MESA 57 x 57 MILS 8.7 MILS 0.6 MILS 24 x 14 MILS 7.9 x 7.9 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A
BACKSIDE ANODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (19... |
| Description |
Silicon Controlled Rectifier Sensitive Gate SCR Chip
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| File Size |
125.17K /
2 Page |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CPS090
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| OCR Text |
... Passivated Mesa 90 x 90 MILS 8.7 MILS 60 x 30 MILS 22 x 22 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A
GEOMETRY
GROSS DIER PER 4 INCH WAFER 1,310 PRINCIPAL DEVICE TYPES CS220-8M Series CSD-8M Series CSDD-8M Series
145 Adams Avenue Hau... |
| Description |
Silicon Controlled Rectifier 8.0 Amp Sensitive Gate SCR Chip
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| File Size |
34.54K /
1 Page |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CPZ18
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| OCR Text |
...n EPITAXIAL PLANAR 14 X 14 MILS 7.5 MILS 9.5 X 9.5 MILS Al - 30,000A Au - 14,000A
GEOMETRY GROSS DIE PER 4 INCH WAFER 61,141 PRINCIPAL DEVICE TYPES CMPZ5221B THRU CMPZ5234B
BACKSIDE CATHODE
145 Adams Avenue Hauppauge, NY 11788 USA ... |
| Description |
Chip Form: ZENER DIODE
Zener Diode 0.5 Watt Zener Diode Chip
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| File Size |
207.40K /
2 Page |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CPZ19
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| OCR Text |
...n EPITAXIAL PLANAR 18 X 18 MILS 7.5 MILS 11 X 11 MILS Al - 30,000A Au - 14,000A
GEOMETRY GROSS DIE PER 4 INCH WAFER 36,600 PRINCIPAL DEVICE TYPES CMPZ5235B THRU CMPZ5261B
BACKSIDE CATHODE
145 Adams Avenue Hauppauge, NY 11788 USA Te... |
| Description |
Chip Form: ZENER DIODE
Zener Diode 0.5 Watt Zener Diode Chip
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| File Size |
207.43K /
2 Page |
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it Online |
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DYNEX[Dynex Semiconductor]
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| Part No. |
DCR840F48 DCR840F DCR840F42 DCR840F44 DCR840F46
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| OCR Text |
...I2t (VR = 50% VRRM) 1 2 3 4 5 6 7 8 9 Pulse length, half sine wave - (ms) 10 0
2
0 0
10
20 30 40 Number of cycles @ 50Hz
50
60
Fig.7 Sub-cycle surge currents
Fig.8 Multi-cycle surge currents
7/9
www.dynexsemi.c... |
| Description |
Phase Control Thyristor Preliminary Information
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| File Size |
138.06K /
9 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IR2128
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| OCR Text |
.... Max. Units Test Conditions
2.7 -- 180 -- -- -- -- -- -- -- -- -- 8.8 7.5 200 420 -- -- 250 -- -- -- 150 60 7.0 -- -- -- 10.3 9.0 250 500 ...000A 8 m X 8 m PSG (SiO2) 1.5 m PSG (SiO2) 1.5 m Full Cut Ablebond 84 - 1 Thermo Sonic Au (1.0 mil /... |
| Description |
CURRENT SENSING SINGLE CHANNEL DRIVER
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| File Size |
190.33K /
6 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
MAAA2000G
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| OCR Text |
...yp.
-- -- -- -- -- -- -- -- -- 7 10 20 15 -- 50
Max.
1.2 1.4 1.5 1.5:1 1.5:1 1.8:1 -- -- -- -- -- -- -- 9 100
VSWR Relative Attenuat...000A) metallization. It can be die-mounted using Au/Sn eutectic preforms or a thermally conductive e... |
| Description |
GaAs MMIC Voltage Variable Absorptive Attenuator DC - 12 GHz
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| File Size |
61.20K /
3 Page |
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MACOM[Tyco Electronics]
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| Part No. |
MASW4060G
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| OCR Text |
...0 2 4 20
Max.
1.3 1.3 1.3 1.7 -- -- -- -- 1.4:1 1.4:1 1.5:1 2.0:1 -- -- -- -- -- -- 25 200 -- -- --
Isolation
VSWR
Input P-1dB
...000A) metallization. It can be diemounted with AuSn eutectic performs or with thermally conductive e... |
| Description |
GaAs SP4T Switch DC - 4.0 GHz
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| File Size |
59.68K /
3 Page |
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MA-Com
MACOM[Tyco Electronics]
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| Part No. |
MASW6010G
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| OCR Text |
...Frequency GHz
4
5
6
7
Isolation @ +25C Isolation @ +25C
Operating Characteristics
Loss (dB)
80 70
Impedance Switchi...000A) metallization.It can be die-mounted with AuSn eutectic preforms or with thermally conductive e... |
| Description |
DC-6 GHz GaAs SPDT switch
GaAs SPDT Switch DC-6 GHz
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| File Size |
90.35K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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