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  6-9ghz Datasheet PDF File

For 6-9ghz Found Datasheets File :: 789    Search Time::1.641ms    
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    Analog Devices, Inc.
Part No. AD8316-EVAL
OCR Text ...puts 49 db range at 0.9 ghz (?7.6 dbm to +1.5 dbm re 50 ) accurate scaling from 0.1 ghz to 2.5 ghz temperature-stable linear-in-db respons...9ghz 1.9ghz 2.5ghz 0.1ghz input amplitude e dbv tpc 1. v set vs. input amplitude input amplitude e ...
Description Dual Output GSM PA Controller 双输出GSM功率放大器控制器

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    BFP181

INFINEON[Infineon Technologies AG]
Part No. BFP181
OCR Text ...b 0.32 Cce 0.27 Ccb 0.21 0.4 fT 6 8 typ. max. Unit GHz pF dB 1G ms = |S21 / S12 | 3 Jun-21-2001 BFP181 SPICE Para...9GHz VCE = Parameter 24 10V dB 5V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 18 ...
Description NPN Silicon RF Transistor

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183R Q62702-F1594
OCR Text ...cy Values typ. max. Unit fT 6 8 0.35 0.27 1 - GHz pF 0.5 dB 1.2 2 - IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 dB 10V...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183W Q62702-F1503
OCR Text ...cy Values typ. max. Unit fT 6 8 0.4 0.27 1 - GHz pF 0.6 dB 1.2 2 - IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance ...9GHz VCE = Parameter 24 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 dB 10V 5V 3V...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

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    BFS483 Q62702-F1574 Q62702F1574

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS483 Q62702-F1574 Q62702F1574
OCR Text ... Q62702-F1574 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emit...9GHz VCE = Parameter 20 dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB ...
Description NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管(对于低噪声,高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system

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    BFT92 Q62702-F1062 BFT92Q62702-F1062

SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Part No. BFT92 Q62702-F1062 BFT92Q62702-F1062
OCR Text ...z Transducer gain |S21e|2 11.5 6 13.5 8 - IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) ...9GHz VCE = Parameter 16 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 8.5 10V dB 5V 3...
Description PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
From old datasheet system
TRANSISTOR UHF BIPOLAR BREITBAND

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    MAXIM[Maxim Integrated Products]
Part No. MAX2406EVKIT MAX2406_1 MAX2406 MAX24061
OCR Text ...ely 20mA (if using an ammeter). 6) Activate the RF generator's output. A 1.9GHz signal shown on the spectrum analyzer's display should indicate a typical gain of 16dB after accounting for cable losses. 7) If desired, the shutdown feature ca...
Description Evaluation Kit for the MAX2406
From old datasheet system

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    Prewell
Part No. PW510
OCR Text ...2300 mhz 3500 mhz 3.4 3.4 3.5 3.6 v / i device voltage / current v/ma 5.4/85 rth thermal resistance c/w 65 test conditions : t=25 c, suppl...9ghz -20 -16 -12 -8 -4 0 4 8 0 5 10 15 20 25 output power / gain vs. input power @ 0.9ghz output p...
Description InGaP HBT Gain Block

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    TriQuint Semiconductor, Inc.
Part No. WJA1020-PCB
OCR Text ...wo tones at an output power of 6 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature -55 to...
Description
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    CXG1144AEN

Sony Corporation
Part No. CXG1144AEN
OCR Text ... rf3 ? rf4 rf2 ? rf3, rf4 ? rf1 6 7 8 9 10 5 4 1 2 gnd (recommended) gnd (recommended) v dd 3 logic rf2 gnd gnd f3 f1 f2 f4 rf1 ctl rf3 gnd ...9ghz 900mhz 1.9ghz 50 ? ? 1 ? 3 ? 1 ? 3 ? 2 ? 4 v dd = 2.8v v dd = 3.0v vctl (h) = 3v symbol il is...
Description Hight Frequency Switch
High Power DPDT Switch with Logic Control

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For 6-9ghz Found Datasheets File :: 789    Search Time::1.641ms    
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