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SIEMENS AG
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| Part No. |
BFR182T
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| OCR Text |
... cb = 10 v, f = 1 mhz 0.33 0.5 pf c cb - 0.18 - c ce collector-emitter capacitance v ce = 10 v, f = 1 mhz - emitter-base capacitance...9ghz v ce = parameter 0 4 8 12 16 20 24 ma 32 i c 7 10 13 16 db 22 g 10v 5v 3v 2v 1v power ga... |
| Description |
NPN Silicon RF Transistor(NPN 射频硅晶体管)
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| File Size |
92.07K /
6 Page |
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it Online |
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Sanyo
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| Part No. |
2SC4405
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| OCR Text |
...s
* High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=0.9GHz) * Small noise figure : NF=1.5dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4405applied sets to be made smaller and slimmer.
1.250
2.1
... |
| Description |
NPN Epitaxial Planar Silicon Transistor UHF, Low-Noise, Wide-Band Amplifier Applications
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| File Size |
111.73K /
5 Page |
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it Online |
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SIEMENS AG
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| Part No. |
BFP182
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| OCR Text |
...er-base capacitance v eb = 0.5 v, f = 1 mhz 0.6 - c eb - 1.2 1.9 f - - noise figure i c = 3 ma, v ce = 8 v, z s = z sop...9ghz v ce = parameter 0 5 10 15 ma 25 i c 10 11 12 13 14 15 16 17 18 19 20 21 db 2... |
| Description |
NPN Silicon RF Transistor(NPN 射频硅晶体管)
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| File Size |
116.33K /
7 Page |
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it Online |
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SIEMENS AG
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| Part No. |
BFP182W
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| OCR Text |
...er-base capacitance v eb = 0.5 v, f = 1 mhz 0.6 - c eb - 1.2 1.9 f - - noise figure i c = 3 ma, v ce = 8 v, z s = z sop...9ghz v ce = parameter 0 5 10 15 ma 25 i c 8 10 12 14 16 18 20 db 24 g 10v 3v 2v 1v... |
| Description |
NPN Silicon RF Transistor(NPN 射频硅晶体管)
|
| File Size |
116.16K /
7 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
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| Part No. |
BFP182R
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| OCR Text |
...er-base capacitance v eb = 0.5 v, f = 1 mhz 0.6 - c eb - 1.2 1.9 f - - noise figure i c = 3 ma, v ce = 8 v, z s = z sop...9ghz v ce = parameter 0 5 10 15 ma 25 i c 10 11 12 13 14 15 16 17 18 19 20 21 db 2... |
| Description |
NPN Silicon RF Transistor(NPN 射频硅晶体管)
|
| File Size |
125.23K /
7 Page |
View
it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SC3778 0378
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| OCR Text |
...). * High cutoff frequency : fT=5.0GHz typ.
JEDEC : TO-92 EIAJ : SC-43
C : Collector E : Emitter B : Base SANYO : NP
Specifications...9GHz VCE=10V, IC=20mA, f=0.9GHz VCE=10V, IC=5mA, f=0.9GHz, See specified Test Circuit. Ratings min 8... |
| Description |
NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications
From old datasheet system
NPN Epitaxial Planar Silicon Transistors
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| File Size |
124.32K /
5 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
BFP183R Q62702-F1594
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| OCR Text |
...ion Symbol Values 12 20 20 2 65 5 mW 250 150 - 65 ... + 150 - 65 ... + 150 295 C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)...9GHz VCE = Parameter
22
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
16
dB
10V... |
| Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system
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| File Size |
58.40K /
7 Page |
View
it Online |
Download Datasheet |
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SIEMENS[Siemens Semiconductor Group]
Infineon
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| Part No. |
BFP183W Q62702-F1503
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| OCR Text |
...ion Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 ... + 150 - 65 ... + 150 205 C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)...9GHz VCE = Parameter
24
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
18 dB 10V 5V 3V... |
| Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
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| File Size |
59.61K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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