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  5.1-5.9ghz Datasheet PDF File

For 5.1-5.9ghz Found Datasheets File :: 796    Search Time::2.531ms    
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    WJA1025 WJA1025-PCB

WJ Communication. Inc.
Part No. WJA1025 WJA1025-PCB
OCR Text 5 dBm P1dB @ 1.9GHz +32 dBm OIP3 @ 1.9GHz Operates from +5V @ 60mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package +5V Active-Bias InGaP HBT Gain Block Product Description The WJA1025 is a cascadable gain block that offers h...
Description 5V Active-Bias InGaP HBT Gain Block

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    Sanyo
Part No. 2SC4405
OCR Text ...s * High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=0.9GHz) * Small noise figure : NF=1.5dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4405applied sets to be made smaller and slimmer. 1.250 2.1 ...
Description NPN Epitaxial Planar Silicon Transistor UHF, Low-Noise, Wide-Band Amplifier Applications

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    WJA1021-PCB WJA1021

WJ Communication. Inc.
Part No. WJA1021-PCB WJA1021
OCR Text 5 dB Gain @ 1.9GHz +19 dBm P1dB @ 1.9GHz +37.5 dBm OIP3 @ 1.9GHz +5V Single Supply Low current draw (90mA) Unconditionally stable Internally matched to 50 Robust 1000V ESD, Class 1C Lead-free/green/RoHS-compliant SOT-89 package Product ...
Description 5V Active-Bias InGaP HBT Gain Block

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    2SC3772 C3772

Sanyo Semicon Device
Part No. 2SC3772 C3772
OCR Text ...atings min typ max 1.0 10 40* 1.5 3.0 0.65 0.45 1.0 200* Unit A A GHz pF pF * : The 2SC3772 is classified by 10mA hFE as follows : (Note) Marking : LY hFE rank : 2, 3, 4 Any and all SANYO products described or contained herein do n...
Description 2SC3772
NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications

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    SANYO
Part No. 2SC3776
OCR Text ...V, f=1MHz VCB=10V, f=1MHz 40* 1.5 3.0 0.7 0.45 1.0 Conditions Ratings min typ max 1.0 10 200* GHz pF pF Unit A A * : The 2SC3776 is classified by 10mA hFE as follows : 40 C 80 60 D 120 100 E 200 Any and all ...
Description NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications

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    Sanyo
Part No. 2SC3778 0378
OCR Text ...). * High cutoff frequency : fT=5.0GHz typ. JEDEC : TO-92 EIAJ : SC-43 C : Collector E : Emitter B : Base SANYO : NP Specifications...1.1 Conditions Ratings min typ max 1.0 10 200* GHz pF pF Unit A A * : The 2SC3778 is classified b...
Description NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications
From old datasheet system
NPN Epitaxial Planar Silicon Transistors

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    BFP181

INFINEON[Infineon Technologies AG]
Part No. BFP181
OCR Text 5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP181 Maximum Ratings Parameter Marking RFs 1=C Pin Configuration 2=E 3=B 4...
Description NPN Silicon RF Transistor

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183R Q62702-F1594
OCR Text ...ion Symbol Values 12 20 20 2 65 5 mW 250 150 - 65 ... + 150 - 65 ... + 150 295 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 76 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Juncti...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183W Q62702-F1503
OCR Text ...ion Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 ... + 150 - 65 ... + 150 205 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 58 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Juncti...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

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    BFS483 Q62702-F1574 Q62702F1574

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS483 Q62702-F1574 Q62702F1574
OCR Text ... 483 RHs Q62702-F1574 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector ...
Description NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管(对于低噪声,高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system

File Size 53.84K  /  6 Page

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For 5.1-5.9ghz Found Datasheets File :: 796    Search Time::2.531ms    
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