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  36.5dbm Datasheet PDF File

For 36.5dbm Found Datasheets File :: 950    Search Time::1.563ms    
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    EFA018A

Excelics Semiconductor, Inc.
Part No. EFA018A
OCR Text ...93 122.2 1.29 8 -25.0 0.10 9 -36. 8 0 . 55 1 -124.4 33 . 0 0 . 778 117.3 1.25 4 -29.9 0.10 6 -41. 4 0 . 53 7 -129.5 34 . 0 0 . 771 111.3 1.22 2 -36.5 0.10 7 -43. 8 0 . 52 0 -135.9 35 . 0 0 . 805 103.9 1.19 4 -42.3 0.10 2 ...
Description Low Distortion GaAs Power FET

File Size 99.47K  /  2 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFC45V5964A_04 MGFC45V5964A MGFC45V5964A04
OCR Text ... f=10(MHz) 0 Po 42 40 38 36 34 32 30 28 26 24 22 20 -10 -20 -30 -40 IM3 -50 -60 18 20 22 24 26 28 30 32 34 36 INPUT POWER Pin(dBm S.C.L.) S PARAMETERS f (GHz) 5.90 6.00 6.10 6.20 6.30 6.40 (Ta=25 Deg.C , VDS=10V , IDS=...
Description 5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET

File Size 222.82K  /  3 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFC45V3642A_04 MGFC45V3642A MGFC45V3642A04
OCR Text ...power added efficiency P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. (1) R1.2 0.6 +/- 0.15 17.4 +/- 0.2 2MIN 8.0 +/- 0.2 (2) (3) 20.4 +/- 0.2 APPLICATION item 01...
Description 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET

File Size 226.59K  /  3 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFC45V3436A
OCR Text ...power added efficiency P.A.E. = 36 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. (1) 0.6 +/- 0.15 (2) (3) 20.4 +/- 0.2 16.7 5 0 . 0 / + 1 . 0 2 . 0 / + 4 . 2 APPLICATION item 0...
Description 3.4-3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET

File Size 212.20K  /  2 Page

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    HMC707LP510 HMC707LP5E

Hittite Microwave Corporation
Hittite Microwave Corporati...
Part No. HMC707LP510 HMC707LP5E
OCR Text ...tates are shown) 16 20 24 28 32 36 0.5 0.7 0.9 1.1 1.3 1.5 +25c +85c -40c frequency (ghz) gain (db) vdd=5v vdd=3v -20 -15 -10 -5 0 0.5 0.7 ...5dbm 28 32 36 40 44 0.7 0.8 0.9 1 1.1 1.2 pout=-15 dbm pout=-10 dbm pout= -5 dbm pout= 0 dbm freq...
Description 0.5 dB LSB 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 700 - 1200 MHz

File Size 805.83K  /  12 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFC45V3436A_04 MGFC45V3436A MGFC45V3436A04
OCR Text ...power added efficiency P.A.E. = 36 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. (1 ) R 1 .2 0 .6 + /- 0 .1 5 17.4 +/- 0.2 8.0 +/- 0.2 (2 ) 2M IN (3 ) 2 0 .4 + /- 0 .2 0.1 +/- ...
Description 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET

File Size 216.25K  /  3 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. TIM7785-4UL
OCR Text 36.5dbm at 7.7GHz to 8.5GHz HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Ga...
Description MICROWAVE POWER GaAs FET

File Size 68.41K  /  4 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. TIM7785-60SL
OCR Text ...DISTORTION IM3=-45 dBc at Pout= 36.5dbm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHz T HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIF...
Description MICROWAVE POWER GaAs FET

File Size 79.91K  /  4 Page

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    MGFS38E3336-01

Mitsubishi Electric Semiconductor
Part No. MGFS38E3336-01
OCR Text ...cy 3300 3600 mhz gp gain 36.0 db evm evm 2.5 % vdet power detector voltage 1.8 v att control gain step 23 db...5dbm 64qam ofdm modulation duty cycle <= 50% 950 ma *note : ta=25 ? c unless otherwise not...
Description 3.3 - 3.6GHz HBT MMIC MODULE

File Size 518.00K  /  24 Page

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For 36.5dbm Found Datasheets File :: 950    Search Time::1.563ms    
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