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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V5964A_04 MGFC45V5964A MGFC45V5964A04
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| OCR Text |
... f=10(MHz)
0
Po
42 40 38 36 34 32 30 28 26 24 22 20
-10 -20 -30 -40
IM3
-50 -60 18 20 22 24 26 28 30 32 34 36
INPUT POWER Pin(dBm S.C.L.)
S PARAMETERS
f (GHz) 5.90 6.00 6.10 6.20 6.30 6.40
(Ta=25 Deg.C , VDS=10V , IDS=... |
| Description |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
222.82K /
3 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V3642A_04 MGFC45V3642A MGFC45V3642A04
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| OCR Text |
...power added efficiency P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
(1) R1.2
0.6 +/- 0.15
17.4 +/- 0.2
2MIN
8.0 +/- 0.2
(2)
(3) 20.4 +/- 0.2
APPLICATION
item 01... |
| Description |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
226.59K /
3 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V3436A
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| OCR Text |
...power added efficiency P.A.E. = 36 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
(1)
0.6 +/- 0.15
(2)
(3) 20.4 +/- 0.2 16.7
5 0 . 0 / + 1 . 0
2 . 0 / + 4 . 2
APPLICATION
item 0... |
| Description |
3.4-3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
212.20K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V3436A_04 MGFC45V3436A MGFC45V3436A04
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| OCR Text |
...power added efficiency P.A.E. = 36 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
(1 ) R 1 .2
0 .6 + /- 0 .1 5
17.4 +/- 0.2
8.0 +/- 0.2
(2 )
2M IN
(3 ) 2 0 .4 + /- 0 .2
0.1 +/- ... |
| Description |
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
216.25K /
3 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM7785-4UL
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| OCR Text |
36.5dbm at 7.7GHz to 8.5GHz HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25C )
CHARACTERISTICS Output Power at 1dB Compression Point Power Ga... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
68.41K /
4 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM7785-60SL
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| OCR Text |
...DISTORTION IM3=-45 dBc at Pout= 36.5dbm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHz T HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIF... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
79.91K /
4 Page |
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it Online |
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