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TRIQUINT SEMICONDUCTOR INC
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| Part No. |
TQM763022
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| OCR Text |
...5 o c 23.5 16 29 22 31 db adjacent channel power (acp1) 2 ? +16dbm pout +28dbm ? pout +16dbm vcc=3.4v; vref=2.85...5dbm ? pout = +16dbm vcc=3.4v; vref=2.85v; temp=25 o c 23.5 16 27 22 31 db adjacent c... |
| Description |
TELECOM, CELLULAR, BASEBAND CIRCUIT, PDSO10
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| File Size |
180.16K /
11 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM3438-16SL
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| OCR Text |
...DISTORTION IM3=-45 dBc at Pout= 31.5dbm Single Carrier Level n HIGH POWER P1dB=42.5dBm at 3.4GHz to 3.8GHz
n HIGH GAIN G1dB=12.5dB at 3.4GHz to 3.8GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SP... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
39.63K /
2 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM4450-16UL
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| OCR Text |
...10V dB A dB % Two-Tone Test Po= 31.5dbm
(Single Carrier Level)
(VDS X IDS + Pin - P1dB) X Rth(c-c)
SYMBOL P1dB
CONDITIONS
UNIT dBm
MIN. 41.5 9.0 -44
TYP. MAX. 42.5 10.0 4.4 36 -47 4.4 5.0 0.6 5.0 80
f = 4.4 to... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
44.43K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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