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  30.08 Datasheet PDF File

For 30.08 Found Datasheets File :: 83137    Search Time::7.235ms    
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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text ...rating 40 Pch (W) -100 I D (A) -30 -10 -3 PW Op Maximum Safe Operation Area 10 s 30 Channel Dissipation Drain Current DC ...08 VGS = -2.5 V -1, -2 A -5 A -1 A -2 A 0.04 0 -40 -4 V 0 40 80 120 160 Case Temperature Tc...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

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    2SJ451

Hitachi Semiconductor
Part No. 2SJ451
OCR Text ...n 50 Ta = 25 C -1 -3 -10 -30 -100 V DS (V) Drain to Source Voltage 0 50 100 150 Ta (C) 200 -0.1 -0.3 Ambient Temp...08 -0.08 -0.04 -0.04 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 -1...
Description    Silicon P-Channel MOS FET

File Size 39.56K  /  8 Page

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    2SJ452

HITACHI[Hitachi Semiconductor]
Part No. 2SJ452
OCR Text ...n 50 Ta = 25 C -1 -3 -10 -30 -100 V DS (V) Drain to Source Voltage 0 50 100 150 Ta (C) 200 -0.1 -0.3 Ambient Temp...08 VGS = -2 V Pulse Test 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -0.08 Tc = 75C ...
Description    Silicon P-Channel MOS FET

File Size 39.33K  /  8 Page

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    2SJ456

SANYO[Sanyo Semicon Device]
Part No. 2SJ456
OCR Text ...ditions 2.5 Ratings --250 30 --9 Unit V V A A W C C PW10s, duty cycle1% Tc=25C --36 50 150 --55 to +150 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zer...
Description    Ultrahigh-Speed Switching Applications

File Size 29.04K  /  4 Page

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    2SJ466

SANYO[Sanyo Semicon Device]
Part No. 2SJ466
OCR Text ...e 3 : Drain SANYO : ZP Unit -30 20 -35 -140 50 150 V V A A W C C -55 to +150 Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 38.71K  /  4 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ...h Tstg Note2 Note1 Ratings -30 20 -30 -120 -30 30 150 -55 to +150 Unit V V A A A W C C 2 2SJ471 Electrical Characteristics (Ta...08 I D = -20 A V GS = -4 V 0.06 -5, -10 A 0.04 -5, -10, -20 A -10 V Pulse Test 0 40 80 120 Cat...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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    2SJ483

HITACHI[Hitachi Semiconductor]
Part No. 2SJ483
OCR Text ...D I D(pulse) Note1 Ratings -30 20 -5 -20 -5 0.9 150 -55 to +150 Unit V V A A A W C C Body to drain diode reverse drain current I D...08 0.12 5 630 390 135 15 70 65 60 -1.0 60 Max -- -- -10 10 -2.0 0.11 0.17 -- -- -- -- -- -- -- -- --...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.73K  /  9 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ...tings -60 20 -20 -80 -20 -20 34 30 150 -55 to +150 Unit V V A A A A mJ W C C EAR* Pch* Tch Tstg Notes: 1. PW 10s, duty cycle 1...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 Case Temperature Tc (C) 160 -5, -10 A 100 30 10...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ...AP Note3 Note3 Note2 -15 19 30 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at...08 0.11 11 850 420 110 12 75 125 75 -1.1 70 Max -- -- -10 10 -2.0 0.10 0.16 -- -- -- -- -- -- -- -- ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ...AP Note3 Note3 Note2 -20 34 30 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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