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ST Microelectronics
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| Part No. |
STB6NB50T4
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| OCR Text |
...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 2.9 a 1.35 1.5 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 5.8 a dynamic symbol parameter test condi... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
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| File Size |
263.84K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP6NB80 STP6NB80FP
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| OCR Text |
...tage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d =3 a 1.6 1.9 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d ... |
| Description |
N-CHANNEL 800V - 1.6 OHM - 5.7A - TO-220/TO-220FP
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| File Size |
364.58K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STGW50NB60M
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| OCR Text |
...age v ce = v ge , i c = 250 a 345v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 30 a @25c v ge = 15v, i c = 30 a @100c v ge = 15v, i c = 50 a @25c v ge = 15v, i c = 50 a @100c 1.3 1.2 1.5 1.35 1.9 v v v v symb... |
| Description |
N-CHANNEL 50A - 600V - TO-247 POWERMESH IGBT
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| File Size |
298.38K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP22NM60FP
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| OCR Text |
...voltage v ds =v gs ,i d = 250 a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 11 a 0.19 0.25 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =11a tbd... |
| Description |
N-CHANNEL 600 V - 0.19 OHM - 22 A TO-220/FP/D2PAK/I2PAK MDMESH POWER MOSFET
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| File Size |
359.19K /
10 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP3NB60FP
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| OCR Text |
...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 1.6 a 3.3 3.6 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 3.3 a dynamic symbol parameter test condit... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
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| File Size |
351.23K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP5NC70ZFP
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| OCR Text |
... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 2.4 a 1.8 2.0 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 2.4a 4s... |
| Description |
N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
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| File Size |
353.17K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP5NC90ZFP STB5NC90ZT4
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| OCR Text |
... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 2.5 a 2.1 2.5 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 2.5a 5.... |
| Description |
N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET
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| File Size |
521.94K /
13 Page |
View
it Online |
Download Datasheet
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