Part Number Hot Search : 
F12C05PT T1072CJ RM21B 2SK245 PPC553 SF8JZ47 JHV3472 GBU4D
Product Description
Full Text Search
  3.45v Datasheet PDF File

For 3.45v Found Datasheets File :: 181    Search Time::3.469ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    STU9NC90Z

STMicroelectronics
Part No. STU9NC90Z
OCR Text ...tage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 3.8a 1.1 1.38 w i d(on) on state drain current v ds > i d(on) x r ds(on)max, v gs =10v 7a symbol parameter test conditions min. typ. ma...
Description N-channel Power MOSFET

File Size 347.80K  /  10 Page

View it Online

Download Datasheet





    ST Microelectronics
Part No. STB6NB50T4
OCR Text ...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 2.9 a 1.35 1.5 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 5.8 a dynamic symbol parameter test condi...
Description N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET

File Size 263.84K  /  9 Page

View it Online

Download Datasheet

    ST Microelectronics
Part No. STP6NB80 STP6NB80FP
OCR Text ...tage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d =3 a 1.6 1.9 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d ...
Description N-CHANNEL 800V - 1.6 OHM - 5.7A - TO-220/TO-220FP

File Size 364.58K  /  9 Page

View it Online

Download Datasheet

    P6NB50FP

STMicroelectronics
Part No. P6NB50FP
OCR Text ...voltage v ds =v gs i d =250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d = 2.9 a 1.35 1.5 w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 5.8 a dynamic symbol parameter test conditions min. typ. m...
Description Search --To STP6NB50FP

File Size 144.40K  /  9 Page

View it Online

Download Datasheet

    ST Microelectronics
Part No. STGW50NB60M
OCR Text ...age v ce = v ge , i c = 250 a 345v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 30 a @25c v ge = 15v, i c = 30 a @100c v ge = 15v, i c = 50 a @25c v ge = 15v, i c = 50 a @100c 1.3 1.2 1.5 1.35 1.9 v v v v symb...
Description N-CHANNEL 50A - 600V - TO-247 POWERMESH IGBT

File Size 298.38K  /  9 Page

View it Online

Download Datasheet

    ST Microelectronics
Part No. STP22NM60FP
OCR Text ...voltage v ds =v gs ,i d = 250 a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 11 a 0.19 0.25 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =11a tbd...
Description N-CHANNEL 600 V - 0.19 OHM - 22 A TO-220/FP/D2PAK/I2PAK MDMESH POWER MOSFET

File Size 359.19K  /  10 Page

View it Online

Download Datasheet

    ST Microelectronics
Part No. STP3NB60FP
OCR Text ...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 1.6 a 3.3 3.6 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 3.3 a dynamic symbol parameter test condit...
Description N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET

File Size 351.23K  /  9 Page

View it Online

Download Datasheet

    ST Microelectronics
Part No. STP5NC70ZFP
OCR Text ... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 2.4 a 1.8 2.0 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 2.4a 4s...
Description N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET

File Size 353.17K  /  12 Page

View it Online

Download Datasheet

    ST Microelectronics
Part No. STP5NC90ZFP STB5NC90ZT4
OCR Text ... voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 2.5 a 2.1 2.5 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 2.5a 5....
Description N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET

File Size 521.94K  /  13 Page

View it Online

Download Datasheet

    STP6NB90FP STP6NB90

STMICROELECTRONICS
ST Microelectronics
Part No. STP6NB90FP STP6NB90
OCR Text ...v ds = v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v i d = 3 a 1.7 2 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 5.8 a dynamic symbol parameter test conditions...
Description 5.8 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL 900V - 1.7 OHM - 5.8A - TO-220/TO-220FP POWERMESH MOSFET

File Size 332.95K  /  9 Page

View it Online

Download Datasheet

For 3.45v Found Datasheets File :: 181    Search Time::3.469ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 3.45v

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.0563089847565