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  250 440 Datasheet PDF File

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    APT6029BFLL APT6029SFLL

ADPOW[Advanced Power Technology]
Part No. APT6029BFLL APT6029SFLL
OCR Text ...UNIT Volts Amps 600 21 0.290 250 1000 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS...440 28 56 13 25 13 10 25 8 nC Gate-Source Charge Turn-on Delay Time Rise Time Gate-Drain ("Mi...
Description Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.39K  /  2 Page

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    APT6032AVR

ADPOW[Advanced Power Technology]
Part No. APT6032AVR
OCR Text ...Volts Amps 600 17.5 0.320 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10...440) 25.15 (0.990) 26.67 (1.050) 050-5811 Rev A Dimensions in Millimeters and (Inches) APT'...
Description POWER MOS V 600V 17.5A 0.320 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.36K  /  4 Page

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    APT6035 APT6035AVR

ADPOW[Advanced Power Technology]
Part No. APT6035 APT6035AVR
OCR Text ...T Volts Amps 600 16 0.350 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10...440) 25.15 (0.990) 26.67 (1.050) 050-5824 Rev B Dimensions in Millimeters and (Inches) APT'...
Description POWER MOS V 600V 16A 0.350 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.28K  /  4 Page

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    HBT060ZGHH HBT060ZGHH-A

POWER-ONE[Power-One]
Part No. HBT060ZGHH HBT060ZGHH-A
OCR Text ... 150 150 16 6.5 6.5 Max 200 250 250 18 7 7 Units mVp-p mVp-p mVp-p A A A Io/t=0.1A/uSec) Peak Deviation Settling Time (Vo, 1% of...440 - Max 1 7 2 5 9 +115 32.9 - Units V V mA mSec KHz %Vo,nom Vo,adj C V V 32 30 ...
Description HBT Series . Half-Brick DC/DC Converter 48V Input 60 Watt Triple Output

File Size 112.57K  /  12 Page

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    NTD3055L104 NTD3055L104G NTD3055L104T4 NTD3055L104T4G NTD3055L104-1 NTD3055L104-1G

ONSEMI[ON Semiconductor]
Part No. NTD3055L104 NTD3055L104G NTD3055L104T4 NTD3055L104T4G NTD3055L104-1 NTD3055L104-1G
OCR Text ...age (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VD...440 150 70 pF VGS(th) 1.0 - RDS(on) - VDS(on) - - gFS - 0.98 0.86 9.1 1.50 - - mhos 89 104 Vdc 1.6 4...
Description Power MOSFET

File Size 74.29K  /  8 Page

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    NTE1404

NTE[NTE Electronics]
Part No. NTE1404
OCR Text ...z, Vi = 100mVrms - 38 6 4 200 - 250 45 18 8 300 0.3 400 - 100 12 440 1.0 V dB k pF mVrms % Symbol Test Conditions Min Typ Max Unit THD(AF) f = 1kHz, Vi = 0.5mVrms, V6 = 12V THD(out) f = 1kHz, PO = 1W 1.102 (28.0) Max 17 8 9 1 16 ...
Description Integrated Circuit TV Sound IF Amplifier / Detector / AF Output Circuit
Integrated Circuit TV Sound IF Amplifier, Detector, AF Output Circuit

File Size 23.86K  /  2 Page

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    PST993 PST993C PST993D PST993E PST993F PST993G PST993H PST993I PST993J PST993K PST993L PST994 PST994C PST994D PST994E PS

MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
Part No. PST993 PST993C PST993D PST993E PST993F PST993G PST993H PST993I PST993J PST993K PST993L PST994 PST994C PST994D PST994E PST994F PST994G PST994H PST994I PST994J PST994K PST994L
OCR Text ...2.9 2.7 2.5 2.3 50 0.01 0.1 -25 250 300 20 1 1 0.65 0.4 -17 400 500 4.73 4.40 4.10 3.78 3.47 3.26 3.05 2.84 2.63 2.42 100 Symbol V ...440 400 360 ICCH 320 (A) 280 240 200 160 IOC vs. Ta (PST993) -20 -22 -24 -26 -28 -30 -32 -34 -36...
Description MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset

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    STE110NS20FD

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STE110NS20FD
OCR Text ... (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V Min. 200 10 100 100 Typ. Max. Unit V...440 1.6 Unit A A V ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse wid...
Description N-CHANNEL 200V 0.022 OHM 110A ISOTOP MESH OVERLAY MOSFET
N-CHANNEL 200V - 0.022W - 110A ISOTOP MESH OVERLAY Power MOSFET
N-CHANNEL 200V - 0.022W - 110A ISOTOP MESH OVERLAY⑩ Power MOSFET

File Size 276.58K  /  8 Page

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    SY89833L SY89833LMITR SY89833LMI

MICREL[Micrel Semiconductor]
Part No. SY89833L SY89833LMITR SY89833LMI
OCR Text ...ures 2c-2d see Figures 2c-2d 250 500 The circuit is designed to meet the DC specifications shown in the above table after thermal equi...440 5 600 530 20 200 ps ps ps ps ps ps Note 4 and Note 5 Note 4 and Note 5 Note 6 Note 7 ...
Description 3.3V / 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
3.3V, 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
3.3V 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION

File Size 152.53K  /  10 Page

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    TCA3388 TCA3388DP TCA3388FP

MOTOROLA[Motorola, Inc]
Part No. TCA3388 TCA3388DP TCA3388FP
OCR Text ...e Current into Mic @ 3.7 V 1.45 250 - Vdc mV A 300 2.0 ILeak HOOK STATUS OUTPUT (Pin 13) High Level Voltage @ - 5.0 A Load Current, Off-Hook...440 440 mV/A Vdc Vdc mV mV/A Vdc Vdc mV mV/A Vdc Vdc mV mV Overvoltage Protection Threshold (VLAI - ...
Description TELEPHONE LINE INTERFACE

File Size 272.09K  /  16 Page

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