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  25 12-gf Datasheet PDF File

For 25 12-gf Found Datasheets File :: 1693    Search Time::1.938ms    
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    BA7666FS

Rohm CO.,LTD.
ROHM[Rohm]
Part No. BA7666FS
OCR Text ... VCC Pd Topr Tstg Rating 8 650 -25 +75 -55 +125 Unit V mW C C For operation above 25C free-air temperature, dissipation deratings i...12 N.C. 1F 6 11 N.C. 1000F 7 6dB 75 75 10 Composite Video 75 8 9 In ca...
Description 3channel 75 OHM driver

File Size 30.46K  /  3 Page

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    PHILIPS[Philips Semiconductors]
Part No. SA5209 SA5209N SA5209D
OCR Text ... 1.45 1.55 45 dB 2.4 2.0 60 1.2 25 19 TYP 43 MAX 48 55 21 22 27 28 1.5 1.7 75 90 100 250 2.4 2.6 2.9 3.1 V V k UNIT ICC AV AV RIN Sup...12 0.1F OUTB 6 GND1 GND2 11 7 VBG GND2 10 8 VAGC GND2 9 (1...
Description Wideband variable gain amplifier

File Size 206.26K  /  17 Page

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    VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. 72173 SI7501DN
OCR Text ... ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) P-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain...12.5 9 2.5 2 3.6 1.3 9 3 10 10 20 15 25 20 30 10 25 20 15 15 30 25 40 30 45 15 50 40 ns W 19 14 nC ...
Description Complementary 30-V (D-S) MOSFET

File Size 84.07K  /  8 Page

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    Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. SI4565DY 73224
OCR Text ... ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain...12 Unit V 5.2 4.2 1.7 13 8.5 2.0 1.3 3.9 3.1 30 0.9 -4.5 -3.6 -1.7 16 13 -3.3 -2.7 A...
Description N- and P-Channel 40-V (D-S) MOSFET

File Size 85.08K  /  8 Page

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    BUZ101SL-4

http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
Part No. BUZ101SL-4
OCR Text ...it A ID IDpuls 16.4 TA = 25 C Pulsed drain current one channel active TA = 25 C Avalanche energy, single pulse EAS 90 dv/dt ...12 0.10 c c d e f g h i j 0.08 0.06 0.04 VGS [V] = d e gf h ki j b k l 0.02 a ...
Description Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

File Size 89.10K  /  8 Page

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    M21L11664A M21L11664A-8T M21L11664A-10J M21L11664A-10T M21L11664A-8J

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. M21L11664A M21L11664A-8T M21L11664A-10J M21L11664A-10T M21L11664A-8J
OCR Text ...6 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 Elite Semiconductor Mem...
Description HIGH SPEED CMOS SRAM

File Size 176.20K  /  15 Page

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    Motorola
Part No. MHW1346
OCR Text ...2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 --- 15.24 38.100 BSC 5.080 BSC --- 6.350 11.049 --- 10.160 BSC 3....12 3 5 789 N C E K Z W DIM A B C D E F G J K L N P Q R S U V W X Y Z X T 2X 4X...
Description 5–200 MHz, 35.0 dB 26–Channel CATV High-split Reverse Amplifier Module

File Size 71.46K  /  4 Page

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    TSH112 TSH111 TSH111ID TSH110 TSH114ID TSH114 TSH112ID TSH112IDT TSH112IPT TSH113ID TSH113 TSH110ILT TSH111IDT TSH111IPT

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. TSH112 TSH111 TSH111ID TSH110 TSH114ID TSH114 TSH112ID TSH112IDT TSH112IPT TSH113ID TSH113 TSH110ILT TSH111IDT TSH111IPT TSH113IDT TSH113IPT TSH114IDT TSH114IPT
OCR Text ...ion Min. VCC(VCC- +2) 26 -90 31 25 2 13 OPERATOR STATUS Standby Active OPERATOR STATUS OP1 Standby Active x x Vlow Vhigh x x OP1 x x Standby...12 -100 10 1 10 100 -120 12 -280 10 1 10 100 -300 Frequency (MHz) Frequency (MHz) 8/19 ...
Description WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS
WIDE BAND/ LOW NOISE OPERATIONAL AMPLIFIERS
WIDE BAND LOW NOISE OPERATIONAL AMPLIFIERS
WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS

File Size 422.84K  /  19 Page

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    Motorola
Part No. MHVIC915R2
OCR Text ...= -30_C , DRAIN EFFICIENCY (%) 25_C 50 45 40 35 30 25 20 15 10 5 0 0.1 1 VDD = 26 Vdc, IDQ1 = 50 mA, IDQ2 = 140 mA, f = 880 MHz 10 100 Pout...12. Power Gain versus Supply Voltage -5 IRL, INPUT RETURN LOSS (dB) -10 ACPR (dBc) -15 -20 -25 -3...
Description CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier

File Size 463.26K  /  12 Page

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