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Infineon Technologies A...
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| Part No. |
SGD02N120 SGB02N120 SGI02N120
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| OCR Text |
...on 25c 50c 75c 100c 125c 0w 10w 20w 30w 40w 50w 60w i c , collector current 25c 50c 75c 100c 125c 0a 1a 2a 3a 4a 5a 6a 7a t c , case tempe...100ms 1 s 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t j , junction te... |
| Description |
Fast S-IGBT in NPT-technology
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| File Size |
383.19K /
12 Page |
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Infineon Technologies A... INFINEON[Infineon Technologies AG] SIEMENS A G
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| Part No. |
SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60
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| OCR Text |
...
40A
120w 100W 80W 60W 40W 20w 0W 25C
IC, COLLECTOR CURRENT
50C 75C 100C 125C
Ptot, POWER DISSIPATION
140W
30A
20A
1...100ms
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of ... |
| Description |
Fast S-IGBT in NPT-technology Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技 Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)
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| File Size |
263.73K /
12 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IKA10N60T-13
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| OCR Text |
...5c 100c 125c 150c 0w 5w 10w 15w 20w 25w 30w i c , c o l l e c t o r c u r r e n t 25c 75c 125c 0a 2a 4a 6a 8a 10a t c , case temperature t...100ms 1s 10s 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 z t h j c , t ... |
| Description |
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
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| File Size |
510.47K /
13 Page |
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it Online |
Download Datasheet
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