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    2SC5037 2SC5037A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5037 2SC5037A
OCR Text ... -IB2 VCC tW Vclamp 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2...
Description Silicon NPN triple diffusion planar type

File Size 62.18K  /  3 Page

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    2SC5063

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5063
OCR Text ...t IC (A) 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 ICP -IB2 VCC IC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 102 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) Thermal resi...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 60.70K  /  3 Page

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...stics (Common Emitter) VCC (V) 200 RL () 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.7 IB2 (A) -1.4 ton (s) 1.0max tstg (s) 3.0max tf (s) 0.5max 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Cha...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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    2SC5077 2SC5077A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5077 2SC5077A
OCR Text ...t IC (A) 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 -IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) a...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR

File Size 61.72K  /  3 Page

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    2SC5078

HITACHI[Hitachi Semiconductor]
Part No. 2SC5078
OCR Text ... Ratio vs. Collector Current 200 100 150 100 50 50 0 0.1 0 50 100 Ambient Temperature Ta (C) 150 1 10 Collector Current I C (mA) 100 20 Gain Bandwidth Product f T (GHz) Collector Output Capacitance Cob...
Description    Silicon NPN Epitaxial

File Size 44.24K  /  7 Page

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text ...r Power Dissipation PC (mW) 150 200 DC Current Transfer Ratio h FE VCE = 5V DC Current Transfer Ratio vs. Collector Current 160 100 120 80 50 40 0 0.1 0 50 100 Ambient Temperature Ta (C) 150 1 10 Collector Curr...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 47.56K  /  8 Page

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    2SC829 2SC829B 2SC829C

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PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Part No. 2SC829 2SC829B 2SC829C
OCR Text ... current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 400 40 25C 30 Ta=75C 20 -2...fT -- IE 600 Ta=25C 80 Zrb -- IE Common emitter reverse transfer capacitance Cre (pF) 2.4 C...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay

File Size 54.87K  /  3 Page

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    2SD1010

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1010
OCR Text ...n = FLAT 50 40 15 400 1000 0.05 200 80 2000 0.2 V MHz mV min typ max 100 1 Unit nA A V V V *h FE Rank classification R 400 ~ 800 S...fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Transition frequency fT (...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 37.40K  /  2 Page

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    2SD1023

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1023
OCR Text ... *Z Collector to Base Voltage V 200 V CBO Collector to Emitter Voltage V 200 V CEO Emitter to Base Voltage V 7 V EBO Collector Current DC I ...fT V = 10V, 0.5A = TYP 20 MHz CE C I Turn on Time ton Max 2 I = 3A C Storage Time ts I =B2 5mA Max 8...
Description Darlington Transistor(5A NPN)

File Size 290.46K  /  9 Page

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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ....4 2 1.6 1.2 0.8 0.4 0 1 10 100 200 3.2 IC = 1A 2.8 2.4 12A 2 8A 5A 3A 1.6 IC = 1A 1.2 Collector-Emitter Voltage VCE [V] 0.4 Tc = 25C Pulse measurement hFE MIN 0 Base Current IB [mA] Base-Emitter Vo...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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