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MSAU113 8MFSTD 2593A LM79L12 V07E175 MTV112A 00124 ADTR2
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    2SJ217

NEC
Hitachi Semiconductor
Part No. 2SJ217
OCR Text ...50 Channel Dissipation Pch (W) -200 O is per lim at ite ion d in by th R is DS Maximum Safe Operation Area ar ea 10 s -100 Drain Current ID (A) 100 -50 -20 -10 -5 (o n) 0 10 s PW D C pe O 1 m = s 10 m...
Description Silicon P-Channel MOS FET

File Size 48.19K  /  9 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ... 3 3 2 1 Ratings -60 20 -50 -200 -50 -50 214 75 150 -55 to +150 Unit V V A A A A mJ W C C EAR* Pch* Tch Tstg Notes: 1. PW 10...450 32 225 530 330 -1.1 110 Max -- -- -10 10 -2.0 0.022 0.036 -- -- -- -- -- -- -- -- -- -- Unit V V...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ...e Operation Area 10 PW Op 200 Pch (W) -1000 -300 I D (A) s 150 -100 -30 DC 10 = 10 ion 1 ms (T 0 s m s sh ot) C ) Channel Dissipation Drain Current 100 -10 -3 -1 -0.3 er at (1 50 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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    2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S

HITACHI[Hitachi Semiconductor]
Part No. 2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S
OCR Text ...0 f = 1 MHz Ciss 100 Coss 10 200 100 50 20 10 0.05 1 0 Capacitance C (pF) Crss 0.1 0.2 0.5 1.0 2 Reverse Drain Current IDR (A) 5 10 20 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 100 V Drain to ...
Description    Silicon N-Channel MOS FET
Power switching MOSFET

File Size 47.75K  /  9 Page

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    2SK1153 2SK1154

HITACHI[Hitachi Semiconductor]
Part No. 2SK1153 2SK1154
OCR Text ... vs. Drain to Source Voltage 200 100 50 100 Coss 10 Crss 20 10 0.05 1 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 0.1 0.2 0.5 1.0 2 Reverse Drain Current IDR (A) 5 Dynamic Input Characteristics 500 Drain to S...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 47.74K  /  9 Page

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    2SK1155 2SK1156

HITACHI[Hitachi Semiconductor]
Part No. 2SK1155 2SK1156
OCR Text ...y Time trr (ns) 2,000 1,000 500 200 100 50 0.1 1 10 0 20 50 10 30 40 Drain to Source Voltage VDS (V) di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 1,000 Ciss Capacitance C (pF) VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltag...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 48.47K  /  9 Page

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    2SK1157 2SK1158

Hitachi Semiconductor
Part No. 2SK1157 2SK1158
OCR Text ... 0 f = 1 MHz 2,000 1,000 500 200 100 50 0.2 Capacitance C (pF) 1,000 Ciss Coss 100 10 5 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 Crss 20 10 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Charac...
Description Silicon N-Channel MOS FET

File Size 48.24K  /  9 Page

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    2SK1159 2SK1160

Hitachi Semiconductor
Part No. 2SK1159 2SK1160
OCR Text ...y Time trr (ns) 2,000 1,000 500 200 100 Crss 50 0.2 10 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 20 10 30 40 Drain to Source Voltage VDS (V) 50 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Vol...
Description Silicon N-Channel MOS FET

File Size 48.23K  /  9 Page

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    2SK1165 2SK1166

HITACHI[Hitachi Semiconductor]
Part No. 2SK1165 2SK1166
OCR Text ...y Time trr (ns) 2,000 1,000 500 200 100 Crss 50 0.2 10 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 10 30 40 20 Drain to Source Voltage VDS (V) 50 di/dt = 100 A/s, Ta = 25C VGS = 0 V Pulse Test 10,000 VGS = 0 f = 1 MHz Capacitance C (p...
Description Silicon N-Channel MOS FET

File Size 49.04K  /  9 Page

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    2SK1167 2SK1168 2SK1157 2SK1158 2SK1159 2SK1160

HITACHI[Hitachi Semiconductor]
Part No. 2SK1167 2SK1168 2SK1157 2SK1158 2SK1159 2SK1160
OCR Text ... vs. Drain to Source Voltage 200 100 50 0.2 100 Crss 10 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100...
Description Silicon N-Channel MOS FET

File Size 48.23K  /  9 Page

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