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  2.5 13-g Datasheet PDF File

For 2.5 13-g Found Datasheets File :: 131486    Search Time::7.031ms    
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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...0A --- S VDS = -25V, ID = -16A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 63 ID = -16A 13 nC VDS = -44V 29 VGS = -10V, See Fig. 6 and 13 --- VDD = -28V --- ID = -16A ns --- RG = 6.8 ---...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...ge Continuous Drain Current (TC=25 C) Value 100 14 9.9 1 O Units V A A V mJ A mJ V/ns W W/ C Continuous Drain Current (TC=10...13 14 55 36 27 4.5 12.8 --4.0 100 -100 10 100 0.11 -790 175 72 40 40 110 80 36 --nC ns pF A V ...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ...in Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derat...13 Max. 16 28 44 Unit ns ns nC nC nC SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ...n Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C ...13 Max. 16 28 44 Unit ns ns nC nC nC V GS = 10 V SWITCHING OFF Symbol t r(Voff) tf tc Paramet...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...- --- --- --- --- --- 6.4 27 37 25 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.11 VGS = 10V, ID = ...13 --- VDD = 50V --- ID = 9.0A ns --- RG = 12 --- RD = 5.5, See Fig. 10 Between lead, 7.5 --- nH a...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...age temperature CONDITIONS Tj = 25 C to 175C Tj = 25 C to 175C; RGS = 20 k Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 2...13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.0E-01 1.0E-02 175 C minimum typical 1.0E-04 maximum 1.0E-05 ...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ....037 -- -0.022 -- -- 0.125 -- 0.25 -- 0.20 -- 0.35 -- -- -- -- 4.4 -- 3.0 -- -- 2.0 -- -2.0 -- 25 -- -25 -- 100 9.1 25 11 25 1.2 -- 1.6 -- 2...13. Typical Output Characteristics, TJ = 150oC 2.0 R DS(on) , Drain-to-Source On Resistance (Nor...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ... 7A VDS = 16V, ID = 7A 17 25 m V A mA Gate Threshold Voltage* VGS(th) IDSS Gate-Source Leakage Current* Total Gate Charge Syn...13 - Typical Values of Reverse Current Vs. Reverse Voltage 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forwar...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...SS RDS(on) 1.0 90 7.2 Min 30 17 25 Typ Max Units V m V A mA Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VDS = VGS,ID = 250A VDS = 24V...13 - Typical Values of Reverse Current Vs. Reverse Voltage 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forwar...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ... 2.1 0.76 2.9 3.66 14 1.2 12 17 25 6 5.2 16.8 100 17 12 2.1 0.76 2.9 3.66 14 1.2 12 17 25 6 ns 16.8 VDD = 16V ID = 7A Rg = 2 VGS = 4.5V Res...13. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com IRF780...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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For 2.5 13-g Found Datasheets File :: 131486    Search Time::7.031ms    
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