2.4 5.8ghz pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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2.4 5.8ghz Datasheet PDF File

For 2.4 5.8ghz Found Datasheets File :: 1142 Search Time::1.062ms
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				Infineon Technologies AG
Part No.	BFP540FESD BFP540FESD10
OCR Text	2 4 3 npn silicon rf transistor* ? for esd protected high gain low noise amplifier ? excellent esd performance typical value 1000 v (hbm) ? outstanding g ms = 20 db noise figure f = 0.9 db ? sieget ? 45 - line ? pb-free (...
Description	NPN Silicon RF Transistor S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
File Size	496.31K / 6 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFP181
OCR Text	... F = 1.45 dB at 900 MHz 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP181 Maximum Ratings Parameter Marking RFs 1=C Pin Configuration 2=E 3=B 4=E Package SOT143 Un...
Description	NPN Silicon RF Transistor
File Size	77.16K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BFP183R Q62702-F1594
OCR Text	2 mA to 28 mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...4=B Package SOT-143R Maximum Ratings Parameter Collector-emitter voltage Collector-emitter vol...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) From old datasheet system
File Size	58.40K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BFP183W Q62702-F1503
OCR Text	2 mA to 30 mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
File Size	59.61K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS483 Q62702-F1574 Q62702F1574
OCR Text	...FS 483 RHs Q62702-F1574 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collecto...
Description	NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA) NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管（对于低噪声，高增益的colector2mA至二十八毫安目前的宽带放大器 NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR TRANSISTOR R.F SOT363 From old datasheet system
File Size	53.84K / 6 Page	View it Online	Download Datasheet

				SIEMENS A G SIEMENS[Siemens Semiconductor Group]
Part No.	BFT92 Q62702-F1062 BFT92Q62702-F1062
OCR Text	...ion BFT 92 W1s Q62702-F1062 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emit...4.5354 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 10.983 1.1172 47.577 1...
Description	PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) From old datasheet system TRANSISTOR UHF BIPOLAR BREITBAND
File Size	59.52K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFP540ESD09
OCR Text	2 3 4 npn silicon rf transistor* ? for esd protected high gain low noise amplifier ? excellent esd performance typical value 1000 v (hbm) ? outstanding g ms = 21.5 db noise figure f = 0.9 db ? gold metallization for high relia...
Description	NPN Silicon RF Transistor
File Size	594.54K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	BFP54009
OCR Text	2 3 4 npn silicon rf transistor ? for highest gain low noise amplifier at 1.8 ghz ? outstanding g ms = 21.5 db noise figure f = 0.9 db ? gold metallization for high reliability ? sieget ? 45 - line ? pb-free (rohs complia...
Description	NPN Silicon RF Transistor
File Size	540.63K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGFC39V5258 MGFC39V525811
OCR Text	2 ? 5.8 ghz band / 8w description the mgfc39v5258 is an internally impedance-matched gaas power fet especially designed for use in 5...4 5.6 a gm transconductance vds=3v,id=2.2a - 2 - s vgs(off) gate to source cut-off...
Description	C band internally matched power GaAs FET
File Size	124.61K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGFC47B3538B
OCR Text	...37dbm ? distortion: evm = 2.0% (tpe.) @ po = 37dbm recommended bias condition ? vd = 12(v) ? id = 1.5 (a) ? rg = 10 ohm ...4, channel bandwidth: 7mhz *3 : channel-case <c band internally matched power gaas fet> mgf...
Description	C band Internally Matched Power GaAs FET
File Size	141.10K / 4 Page	View it Online	Download Datasheet

For 2.4 5.8ghz Found Datasheets File :: 1142 Search Time::1.062ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |