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  18800 Datasheet PDF File

For 18800 Found Datasheets File :: 1924    Search Time::1.906ms    
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    MRF6P18190HR6

Freescale Semiconductor, Inc
Part No. MRF6P18190HR6
OCR Text ...s with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - ...0.01% Probability on CCDF. Power Gain -- 15.9 dB Drain Efficiency -- 27.5% IM3 @ 10 MHz Offset -- - ...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 457.52K  /  12 Page

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    Motorola Semiconductor Products
Part No. MRF7S19100N
OCR Text ...) 17 16 15 IRL 14 13 12 PARC 11 1880 1900 1920 1940 1960 1980 2000 2020 -1.7 2040 Gps D 33 32 31 30 VDD = 28 Vdc, Pout = 29 W (Avg.), IDQ = ...0.01% Probability (CCDF) -1.4 -1.5 -1.6 f, FREQUENCY (MHz) Figure 3. Output Peak - to - Averag...
Description 1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system

File Size 529.85K  /  16 Page

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    Skyworks Solutions
Part No. AP119-89
OCR Text ...5 dBm to 33 dBm 100 KHz BW 1805-1880 MHz Band The Change in Phase When POUT Changes from 31 dBm to 32 dBm 3:1 Condition Min. 32.5 29.5 45 -3...0 -5 -10 -3.0 POUT 55 50 45 30 25 20 15 10 5 PAE 2 4 6 8 10 12 14 GAIN POUT PAE (%) P...
Description GaAs ic DCS1800/1900 Power Amplifier

File Size 83.70K  /  4 Page

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    BUK7L11-34ARC

NXP Semiconductors
Philips
Part No. BUK7L11-34ARC
OCR Text ... MHz; Figure 12 8 7 11 53 11 20 1880 640 400 11 20.9 9.7 2506 768 548 m m m nC nC nC pF pF pF RG Qg(tot) Qgs Qgd Ciss Coss Crss Inter...0 V; Figure 15 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V Conditions VDS = 30 V; RL = 1.2 ...
Description TrenchPLUS standard level FET

File Size 97.82K  /  14 Page

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    MRF18085AR3 MRF18085ALSR3

Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
Part No. MRF18085AR3 MRF18085ALSR3
OCR Text ...ified for GSM - GSM EDGE 1805 - 1880 MHz. * GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain - 15 dB (Typ) @ 8...0.5, +65 - 0.5, +15 273 1.56 - 65 to +150 200 Unit Vdc Vdc W W/C C C Table 2. Thermal Characteris...
Description RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET

File Size 374.39K  /  8 Page

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    SKY77324

Skyworks Solutions Inc.
Part No. SKY77324
OCR Text ....5 dBm TCASE = +25 C At 1805 to 1880 MHz RBW = 100 kHz VCC = 3.5 V 6.5 dBm POUT 34.5 dBm TCASE = +25 C Coupling of Fundamental, 2nd, and 3...0 V VAPC = 1.0 V Measured at the DCS/PCS output -15 dBm POUT 34.5 dBm Min. Typ. Max. Units Spur...
Description iPAC™ PAM Quad-Band GSM / GPRS
iPAC PAM for Quad-Band GSM / GPRS

File Size 3,838.89K  /  24 Page

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    EPA480 EPA480C-SOT89

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Eon Silicon Solution
Part No. EPA480 EPA480C-SOT89
OCR Text ...Idss Gm Vp BVgd BVgs Rth dBm 1880 mA mS -2.5 V V V C/W 880 960 Drain Breakdown Voltage Igd=4.8mA Source Breakdown Voltage Igs=4.8mA...0.8 0.6 0.4 0.2 0 0 200 400 Ids [mA] 600 800 50 40 30 20 10 0 IP 3 [dB m] NF IP3 S-PARAMETERS 8V...
Description DC-6GHz High Efficiency Heterojunction Power FET

File Size 36.63K  /  2 Page

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    ERICSSON[Ericsson]
Part No. PBL40305
OCR Text ...5 C to +75 C Noise power 1805 - 1880 MHz 935 - 960 MHz 925 - 935 MHz VAPC = 0.5 V, POUT = 31.5dBm RBW = 30 kHz -76 -82 -70 -5.0 -14 -4.0 -6.0 dBm dBm dBm dBm Symbol Min. Typ. Max. Unit No parasitic oscillations when IDD < 2.20 A All spur...
Description Multiband GSM Power Amplifier

File Size 97.72K  /  7 Page

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    Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PBL40309
OCR Text ...4 dBm Symbol f P PAE PAE G Min. 1880 27 45 35 Typ. Max. Unit MHz dBm % % dB dB dBc Pin = 4-10 dBm, Vcc = 5.2 V, Load VSWR = 6:1 all phases Pin = 4-10 dBm, Vcc = 3.0-5.2 V, Load VSWR = 5:1 all phases No input signal present, IDC PA - ON =...
Description 3.6 V Differential Power Amplifier for DECT Telecommunications system

File Size 84.19K  /  6 Page

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