10a 600v pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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10a 600v Datasheet PDF File

For 10a 600v Found Datasheets File :: 2218 Search Time::2.047ms
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				International Rectifier
Part No.	IRG4CC60UB
OCR Text	...1.1 A Max. Test Conditions IC = 10a, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, V GE = 0V VGE = VCE , TJ =25C, IC =250A TJ = 25C, VCE = 600v TJ = 25C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front...
Description	IRG4CC60UB IGBT Die in Wafer Form
File Size	27.20K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC70UB
OCR Text	... 11 A Max. Test Conditions IC = 10a, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, VGE = 0V VGE = VCE , TJ =25C, IC =250A TJ = 25C, VCE = 600v TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Fron...
Description	IRG4CC70UB IGBT Die in Wafer Form
File Size	34.36K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC71KB
OCR Text	... 11 A Max. Test Conditions IC = 10a, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, VGE = 0V VGE = VCE , TJ =25C, IC =250A TJ = 25C, VCE = 600v TJ = 25C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front ...
Description	IRG4CC71KB IGBT Die in Wafer Form
File Size	37.81K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC72KB
OCR Text	... 11 A Max. Test Conditions IC = 10a, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, VGE = 0V VGE = VCE , TJ =25C, IC = 1.0mA TJ = 25C, VCE = 600v TJ = 25C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Fron...
Description	IRG4CC72KB IGBT Die in Wafer Form
File Size	40.22K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC77KB
OCR Text	... 11 A Max. Test Conditions IC = 10a, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, VGE = 0V VGE = VCE , TJ =25C, IC =1.0mA TJ = 25C, VCE = 600v TJ = 25C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front...
Description	IRG4CC77KB IGBT Die in Wafer Form
File Size	39.14K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC81KB IRG4CC40RB
OCR Text	... 11 A Max. Test Conditions IC = 10a, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, VGE = 0V VGE = VCE , TJ =25C, IC = 1.0mA TJ = 25C, VCE = 600v TJ = 25C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Fron...
Description	TRANSISTOR \| IGBT \| N-CHAN \| 600v V(BR)CES \| CHIP 晶体管\| IGBT的\|正陈\| 600v的五（巴西）国际消费电子展\|芯片 IRG4CC81KB IGBT Die in Wafer Form
File Size	41.01K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC81UB
OCR Text	... 11 A Max. Test Conditions IC = 10a, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, VGE = 0V VGE = VCE , TJ =25C, IC =250A TJ = 25C, VCE = 600v TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Fron...
Description	IRG4CC81UB IGBT Die in Wafer Form
File Size	18.38K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC88KB
OCR Text	... 11 A Max. Test Conditions IC = 10a, TJ = 25C, VGE = 15V TJ = 25C, ICES = 250A, VGE = 0V VGE = VCE , TJ =25C, IC = 1.0mA TJ = 25C, VCE = 600v TJ = 25C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Fron...
Description	IRG4CC88KB IGBT Die in Wafer Form
File Size	40.72K / 1 Page	View it Online	Download Datasheet

				MCC[Micro Commercial Components] Micro Commercial Compon...
Part No.	MR752FR MR756FR MR758FR MR750FR MR7510FR MR751FR MR754FR
OCR Text	...aximum DC Reverse Current At IR 10a TA = 25C Rated DC Blocking 150A TA = 55C Voltage Maximum Reverse Recovery Time 150ns IF=0.5A, IR=1.0A, MR750-754 Trr 250ns Irr=0.25A MR756 500ns MR758-7510 Typical Junction CJ 150pF Measured at Capacitanc...
Description	6.0A, 1000V ultra fast recovery rectifier (MR750FR - MR7510FR) 6 Amp Fast Recovery Rectifier 50 to 1000 Volts
File Size	83.34K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150DY-HBK QM150DY-H
OCR Text	...80 40 0 0 ts IB2=-5A IB2=-10a SWITCHING TIME tf 10 0 7 5 4 3 2 VCC=300V Tj=25C IB1=300mA Tj=125C IC=150A -1 10 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 100 200 300 400 500 600 700 800 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMIT...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	87.83K / 5 Page	View it Online	Download Datasheet

For 10a 600v Found Datasheets File :: 2218 Search Time::2.047ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |