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STMICROELECTRONICS
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| Part No. |
STD36NH02L
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| OCR Text |
... ds = 20v, v ds = 20v @125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds ...30a, v gs =10v (see figure 14) 15.5 4.1 1.7 20 nc nc nc q oss (2) 2. q oss = c oss * ? v in , c ... |
| Description |
30 A, 24 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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| File Size |
752.94K /
13 Page |
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Advanced Power Electronics Corp. Advanced Power Electron...
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| Part No. |
AP73T02GH-HF AP73T02GJ-HF AP73T02GH-HF-14 AP73T02GJ-HF-14
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| OCR Text |
...current v ds =25v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =15a - 14 22 ...30a - 85 - ns t d(off) turn-off delay time r g =3.3 ? ,v gs =10v - 20.5 - ns t f fall time r d =0.5 ... |
| Description |
Low On-resistance, Simple Drive Requirement 57 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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| File Size |
95.20K /
4 Page |
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it Online |
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