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Motorola, Inc.
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| Part No. |
MC3361 MC3361B
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| OCR Text |
...ns equipment. * Operates from 2.0 to 8.0 V Supply
MC3361B
LOW POWER NARROWBAND FM IF
SEMICONDUCTOR TECHNICAL DATA
* * * *
Low Dra...510 8.2 k + 1.0 Filter Amp In AF Output 0.01 Filter Amp Out
12
0.1 Quad Coil
FL1 - muRata E... |
| Description |
Low Power Narrowband FM IF Receiver(低功耗窄带FM IF接收 From old datasheet system Single Radio Communication IF Amplifier
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| File Size |
205.80K /
8 Page |
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Motorola
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| Part No. |
MHW7185CL
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| OCR Text |
... -- -- -- -- -70 -83 -66 -69 -- 0.007 -64 -68 dBc 110-Channel FLAT 77-Channel FLAT -63 -67 dB dB/MHz dBc 110-Channel FLAT 77-Channel FLAT Mi...510 .465 .165
1 2 3 5 7 8 9
.355 .435 .315 MIN
.200 .400 1.000
2X #6-32 UNC-2B
E T
NOTES... |
| Description |
750 MHz, 19.2 dB Gain, 24 V 110–Channel CATV Amplifier Module
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| File Size |
94.56K /
4 Page |
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it Online |
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Motorola
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| Part No. |
MHW7185C
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| OCR Text |
... -- -- -- -- -72 -80 -66 -70 -- 0.006 -64 -68 dBc 110-Channel FLAT 77-Channel FLAT -63 -68 dB dB/MHz dBc 110-Channel FLAT 77-Channel FLAT Mi...510 .465 .165
1 2 3 5 7 8 9
.355 .435 .315 MIN
.200 .400 1.000
2X #6-32 UNC-2B
E T
NOTES... |
| Description |
750 MHz, 19.4 dB Gain, 24 V 110–Channel CATV Amplifier Module
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| File Size |
94.39K /
4 Page |
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it Online |
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STMicro
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| Part No. |
SD2903 4845
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| OCR Text |
...tsink T hermal Resistance 1.75 0.40
o o
C/W C/W
* Determined using a flat aluminum or copper heatsink with thermal compound applied ...510 0.240
DIM.
1008194C
7/8
SD2903
Information furnished is believed to be accurate and... |
| Description |
RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs From old datasheet system
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| File Size |
238.09K /
8 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP15N60U_D ON1858 MGP15N60U ON1857
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| OCR Text |
...On-Voltage - 1.7 V typical at 8.0 A, 125C Robust High Voltage Termination ESD Protection Gate-Emitter Zener Diodes
MGP15N60U
IGBT IN TO-...510 39.2 8.7 17.4 -- -- -- -- -- -- -- -- -- -- -- -- -- ns (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = ... |
| Description |
IGBT IN TO-220 15 A @ 90 26 A @ 25 600 VOLTS From old datasheet system Insulated Gate Bipolar Transistor
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| File Size |
116.67K /
5 Page |
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it Online |
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Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
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| Part No. |
MRF19030LSR3 MRF19030LR3
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| OCR Text |
... with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * CDMA Performance @ 1990 MHz, 2...510 0.510 0.325 0.080 0.080 0.080 0.030 Arlon
x 0.480 Microstrip x 0.280 Microstrip x 0.200 Micro... |
| Description |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
591.35K /
8 Page |
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it Online |
Download Datasheet
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Motorola
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| Part No. |
MRF19030SR3 MRF19030R3
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| OCR Text |
... with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * CDMA Performance @ 1990 MHz, 2...510 x 0.200 Microstrip 0.510 x 0.200 Microstrip 0.325 x 0.280 Microstrip 0.080 x 0.480 Microstrip 0.... |
| Description |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
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| File Size |
446.17K /
8 Page |
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it Online |
Download Datasheet
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