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PS1E10 2002001 1N4732 EZ1585D HC126 SSP2N80A V63LA 27006
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  0.468 Datasheet PDF File

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    2SC5184 2SC5184-T1 2SC5184-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5184 2SC5184-T1 2SC5184-T2
OCR Text ...mA, f = 2 GHz (Units: mm) 2.1 0.1 1.25 0.1 * Super Mini-Mold package EIAJ: SC-70 2.0 0.2 0.3+0.1 -0 0.65 0.65 ORDERING INFORMAT...468 2.364 2.274 S21 ANG 164.5 154.3 144.7 136.0 129.3 122.1 115.3 109.8 104.7 100.0 95.9 91.7 88.4 8...
Description NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

File Size 57.03K  /  12 Page

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    HSSR-8400 HSSR711X

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. HSSR-8400 HSSR711X
OCR Text ... with an input voltage, VF , of 0.8 V or less. The detector contains a high speed photosensitive FET driver circuit and two high voltage MOS...468 Regulatory Information The HSSR-8400 has been approved by the following organizations: UL...
Description 90 V/1.0 W/ Hermetically Sealed/ Power MOSFET Optocoupler
400 V/10 Ohm, General Purpose, 1 Form A, Solid State Relay

File Size 250.38K  /  13 Page

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    K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J
OCR Text ...N,VOUT VCC Tstg PD IOS Address -0.5 to +4.6 -0.5 to +4.6 -55 to +150 1 50 Rating CMOS DRAM Units 5V -1.0 to +7.0 -1.0 to +7.0 -55 to +150 1 50 V V C W mA * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceede...
Description 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out

File Size 550.56K  /  35 Page

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    K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
OCR Text ...VCC Tstg PD IOS Address Rating -0.5 to +6.5 -0.5 to +4.6 -55 to +150 1 50 CMOS DRAM Units V V C W mA * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the con...
Description 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns

File Size 415.47K  /  21 Page

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    MRFIC1805

MOTOROLA[Motorola, Inc]
Part No. MRFIC1805
OCR Text .... The design is optimized for 3.0 Volt operation in systems such as Japan's PHS, Europe's DECT and the emerging North American PCS services....468 0.454 -75 -75 -75 -74 -74 -74 -74 -75 -75 -77 -78 -79 -81 -82 -84 -86 -88 -90 -93 -95 -97 |S21|...
Description 1.9 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

File Size 218.53K  /  10 Page

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    MRFIC1808

Motorola, Inc
Part No. MRFIC1808
OCR Text ....7 to 2.1 2.7 to 4.5 2.7 to VDD 0 to 0.2 Unit GHz Vdc Vdc Vdc ELECTRICAL CHARACTERISTICS (VDD = 3 V, TA = 25C, RF = 1.9 GHz, RX ENABLE = ...468 0.518 0.561 0.597 0.633 0.664 0.694 0.717 0.742 0.762 0.778 0.792 0.807 0.815 0.821 0.826 0.829 ...
Description 1.9 GHz GaAs LOW NOISE AMPLIFIER

File Size 156.48K  /  8 Page

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    RC4194 RC4194D RM4194D

Fairchild Semiconductor
Part No. RC4194 RC4194D RM4194D
OCR Text ...2V * Load current - 200 mA with 0.04% load regulation * Internal thermal shutdown at TJ = +175C * External balance for VOUT unbalancing * 3W...468 1042 2381 Units V V V V mA mA mA mW mW mW C C C C C C C mW/C mW/C mW/C RC4194 RM4194 0 ...
Description Dual Tracking Voltage Regulators

File Size 105.72K  /  15 Page

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    TEA5551 TEA5551T

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. TEA5551 TEA5551T
OCR Text ...good AF overdrive performance * 0 to 20 kHz limited frequency response * 25 mW per channel output power in 32 October 1990 2 Phili...468 kHz = ---------------------------------------------V i at f i = 1 MHz note 1 fosc = 1468 kHz Vi...
Description 1-chip AM radio

File Size 160.04K  /  17 Page

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    2SC4227 2SC4227NE68130 2SC4227-T1

NEC[NEC]
Part No. 2SC4227 2SC4227NE68130 2SC4227-T1
OCR Text ...DIMENSIONS in millimeters 2.1 0.1 1.25 0.1 2.0 0.2 +0.1 0.3 -0 0.65 0.65 FEATURES * Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE =...468 5.729 5.115 4.630 4.207 3.879 3.595 3.349 3.133 2.945 2.780 2.631 2.514 2.390 2.293 S21 ANG 154....
Description Silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits 离散

File Size 49.42K  /  8 Page

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    2SC4228 2SC4228-T1 2SC4228-T2 2SC4228NE68030

NEC[NEC]
NEC Corp.
Part No. 2SC4228 2SC4228-T1 2SC4228-T2 2SC4228NE68030
OCR Text ...IMENSIONS in millimeters 2.1 0.1 1.25 0.1 2.0 0.2 +0.1 0.3 -0 0.65 0.65 2 3 +0.1 0.3 -0 FEATURES * High fT * Low Cre * High ...468 .420 .380 .344 .321 .291 .273 .250 .228 .219 .199 .193 .182 S11 ANG -13.4 -26.6 -37.7 -48.9 -56....
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

File Size 47.68K  /  8 Page

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