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v-3.857 Datasheet PDF File

For v-3.857 Found Datasheets File :: 897 Search Time::2.375ms
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				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Eon Silicon Solution
Part No.	EPA480 EPA480C-SOT89
OCR Text	...BVgs Rth dBm 1880 mA mS -2.5 V V V C/W 880 960 Drain Breakdown Voltage Igd=4.8mA Source Breakdown Voltage Igs=4.8mA Thermal Resista...3 [dB m] NF IP3 S-PARAMETERS 8V, 750mA FREQ (GHz) 0.1 0.2 0.3 0.4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4...
Description	DC-6GHz High Efficiency Heterojunction Power FET
File Size	36.63K / 2 Page	View it Online	Download Datasheet

				Isahaya Electronics Corporation
Part No.	2SC5882
OCR Text	v@T 2 C5 S 8 * ` O ~ V R N P G s ^ L -Opg XZ v 'A^ W ` @V , AE m e B L A T (^ * A @ 0 . 4 5 m ) W [ P btp v C ^ h g AZbg ^ x "\L ...3 r@p V ` [ Ti C M =Lia(2T5) L@ V V P V OC B C EO O EB @ Cg db 2 1 3 d- IC C d X...
Description	SILICON NPN EPITAXIAL TRANSISTOR
File Size	116.96K / 6 Page	View it Online	Download Datasheet

				Renesas
Part No.	2SC5894
OCR Text	... 1.5 12 50 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector cutoff current Collector cutoff cu...3 mA, f = 1.8 GHz Rev.1,Nov. 2002, page 2 of 11 2SC5894 Collector Power Dissipation Curve Pc...
Description	Transistors>Amplifiers/Bipolar
File Size	131.29K / 14 Page	View it Online	Download Datasheet

				RENESAS[Renesas Electronics Corporation]
Part No.	2SC5894
OCR Text	... 1.5 12 50 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector cutoff current Collector cutoff cu...3 mA, f = 1.8 GHz Rev.1,Nov. 2002, page 2 of 11 2SC5894 Collector Power Dissipation Curve Pc...
Description	From old datasheet system Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
File Size	126.00K / 13 Page	View it Online	Download Datasheet

				Diotec Semiconductor AG DIOTEC[Diotec Semiconductor]
Part No.	BC857 BC856A BC856B BC858B BC859C BC860 BC859 BC857A BC856 BC857C BC857B BC859B BC858C BC858 BC860C BC858A BC860B
OCR Text	...t - IC - ICM - IBM IEM Tj TS 65 V 80 V Grenzwerte (TA = 25/C) BC 857/860 45 V 50 V 5V 250 mW 1) 100 mA 200 mA 200 mA 200 mA 150/C - 65.....3.2...8.5 kS 30 < 60 :S typ. 2 10-4 typ. 600 6...15 kS 60 < 110 :S typ. 3 10-4 ) Mounted on P.C...
Description	Surface mount Si-Epitaxial PlanarTransistors 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 High Speed CMOS Logic 12-Stage Binary Counter 16-PDIP -55 to 125 High Speed CMOS Logic Dual 4-Stage Binary Counter 14-PDIP -55 to 125 High Speed CMOS Logic 14-Stage Binary Counter 16-PDIP -55 to 125
File Size	121.72K / 2 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	BT829B BT827BKRF BT829BKRF BT827B
OCR Text	...ble system platforms with a 3.3 V digital I/O interface. They support square pixel and CCIR601 resolutions for NTSC, PAL, and SECAM video. They have a flexible pixel port which supports a variety of system interface configurations, and they...
Description	VideoStreamII Decoders
File Size	1,189.11K / 127 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	DL-7140-201S
OCR Text	....4max. 3o0.45 0.1 1 2 3 o2.0 V C C Pin Connection 1 3 Operating Temperature Storage Temperature LD PD 1) Pulse Width 1.0s, Duty 50% 2 Electrical and Optical Characteristics (Tc=25C) Parameter Threshold Current Operati...
Description	INFRARED LASER DIODE
File Size	39.66K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1951A-01 MGF1951A 1951A
OCR Text	...-8 120 300 125 -65 to +125 Unit V V mA mW C C ELECTRICAL CHARACTERISTICS (Ta=+25C) Symbol IDSS VGS(off) P1dB GLP Parameter Saturated Dra...3 11 7 TYP -15 60 -1.4 13 9 MAX -- 120 -3.5 -- -- Unit V mA V dBm dB V(BR)GDO Gate to Drain Breakdow...
Description	Medium Power Microwave MESFET
File Size	28.00K / 4 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	NE6510179A NE6510179A-T1 NE6510179 NE6510179A-A NE6510179A-T1-A
OCR Text	...TPUT POWER: 35 dBm TYP with 5.0 V Vdc 32.5 dBm TYP with 3.5 V Vdc * HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz 0.9 - 0.2 4.2 MAX OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 1.5 - 0.2 Source Source 5.7 MAX 0.6 - 0.15 X ...
Description	NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
File Size	238.22K / 10 Page	View it Online	Download Datasheet

				MICROCHIP[Microchip Technology]
Part No.	MCP121 MCP103 MCP102 MCP131 MCP1XX-475 MCP111 MCP112 MCP1XX-195 MCP1XX-240 MCP1XX-270 MCP1XX-315 MCP1XX-450
OCR Text	...90 4.700 4.746 -- Max 5.5 Units V V A A A A A V V V V V V V V V V V V V V ppm/C IRST = 10 uA, VRST < 0.2V Reset Power-up Timer (tRPU) Inacti...3) Reset Power-up Timer (tRPU) Active (Note 4) TA = +25C (Note 1) TA = -40C to +85C (Note 2) TA = +2...
Description	Micropower Voltage Supervisors
File Size	339.35K / 24 Page	View it Online	Download Datasheet

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