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ON Semiconductor
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| Part No. |
MAC08MT1G
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| OCR Text |
... = 2.0 ms, v drm = 200 v, gate unenergized, t c = 110 c, gate source resistance = 150 , see figure 10) (dv/dt) c 1.5 ? ? v/ s critical rate?of?rise of off state voltage (v pk = rated v drm , t c = 110 c, gate open, exponential met... |
| Description |
Sensitive Gate Triacs Silicon Bidirectional Thyristors 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-261AA
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| File Size |
90.88K /
7 Page |
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| Part No. |
HNT640 HNT616 HIT625 HNT216
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| OCR Text |
...voltage, (1) at tc = 80 c, gate unenergized, vd = vdrm, it = it (rms) commutating dv/dt 5 5 5 v/sec. dc gate - trigger current for vd = 12vdc, rl = 60 ohm and at tc = 25 c (t2 + gate + t2 - gate-) quads 1 & 3 (t2 + gate - t2 - gate +) qu... |
| Description |
600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-218
600 V, 25 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-218
200 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-218
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| File Size |
187.00K /
2 Page |
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Digitron Semiconductors
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| Part No. |
MAC4120-D MAC4120-M MAC4120-B MAC4120-N
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| OCR Text |
...commutating di/dt = 8a/ms, gate unenergized, t c = 75c) dv/dt(c) 2 10 - v/s sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130212
digitron semiconductors 144 market street kenilworth nj 07... |
| Description |
SILICON BIDIRECTIONAL THYRISTORS
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| File Size |
173.55K /
2 Page |
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it Online |
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Price and Availability
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