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  substrates. Datasheet PDF File

For substrates. Found Datasheets File :: 1329    Search Time::0.828ms    
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    HMC232

美国讯泰微波有限公司上海代表
Hittite Microwave Corporation
Part No. HMC232
OCR Text ...(5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface o...
Description GaAs MMIC SPDT NON-REFLECTIVE SWITCH/ DC - 15.0 GHz
GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 15.0 GHz

File Size 156.15K  /  6 Page

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    HMC907

Hittite Microwave Corporation
Part No. HMC907
OCR Text ... mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so...
Description GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz
1/2 Watt Power Amplifier Chip

File Size 329.17K  /  8 Page

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    HMC-ALH50810

Hittite Microwave Corporation
Part No. HMC-ALH50810
OCR Text ... mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so...
Description GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz

File Size 267.17K  /  6 Page

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    HMC-ALH44410

Hittite Microwave Corporation
Hittite Microwave Corpo...
Part No. HMC-ALH44410
OCR Text ...(5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surfac...
Description GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz

File Size 194.88K  /  6 Page

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Part No. HMC-XTB10610
OCR Text ...(5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surfac...
Description GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT

File Size 110.72K  /  6 Page

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Part No. HMC-VVD106
OCR Text ...(5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surfac...
Description GaAs PIN MMIC VOLTAGE-VARIABLE ATTENUATOR, 36 - 50 GHz

File Size 194.40K  /  6 Page

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Part No. HMC-ABH264 HMC-ABH26410
OCR Text ... mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so...
Description GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz

File Size 309.15K  /  6 Page

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    MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508H-1112 MA4E2508H-1112W MA4E2508M

NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
Part No. MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508H-1112 MA4E2508H-1112W MA4E2508M-1112 MA4E2508M-1112W
OCR Text ...manent Die Bonding For hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads ...
Description SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

File Size 94.71K  /  4 Page

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For substrates. Found Datasheets File :: 1329    Search Time::0.828ms    
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