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  single-function Datasheet PDF File

For single-function Found Datasheets File :: 83375    Search Time::3.422ms    
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    PBSS305NZ

NXP Semiconductors
Part No. PBSS305NZ
OCR Text ...r-emitter saturation resistance single pulse; tp 1 ms IC = 4 A; IB = 200 mA [1] Conditions open base Min - Typ 40 Max 80 5.1 1...function of pulse duration; typical values PBSS305NZ_2 (c) NXP B.V. 2009. All rights reserved....
Description 80 V, 5.1 A NPN low VCEsat (BISS) transistor

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    PBSS305NX

NXP Semiconductors
Part No. PBSS305NX
OCR Text ...r-emitter saturation resistance single pulse; tp 1 ms IC = 4 A; IB = 200 mA [1] Conditions open base Min - Typ 38 Max 80 4.6 9...function of pulse duration; typical values PBSS305NX_2 (c) NXP B.V. 2009. All rights reserved....
Description 80 V, 4.6 A NPN low VCEsat (BISS) transistor

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    PBSS304PZ

NXP Semiconductors N.V.
Part No. PBSS304PZ
OCR Text ...r-emitter saturation resistance single pulse; tp 1 ms IC = -4 A; IB = -200 mA [1] Conditions open base Min - Typ 53 Max -60 -4...function of pulse duration; typical values PBSS304PZ_2 (c) NXP B.V. 2009. All rights reserved....
Description 60 V, 4.5 A PNP low V_CEsat (BISS) transistor
60 V, 4.5 A PNP low VCEsat (BISS) transistor

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    PBSS304NX

NXP Semiconductors N.V.
Part No. PBSS304NX
OCR Text ...r-emitter saturation resistance single pulse; tp 1 ms IC = 4 A; IB = 200 mA [1] Conditions open base Min - Typ 37 Max 60 4.7 9...function of pulse duration; typical values PBSS304NX_2 (c) NXP B.V. 2009. All rights reserved....
Description 60 V, 4.7 A NPN low VCEsat (BISS) transistor 60伏,4.7安NPN型低饱和压降(BISS)晶体管

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    GS82032AT-166 GS82032AT-166I GS82032AT-133 GS82032AQ-133I GS82032AT-133I GS82032AQ-166 GS82032AQ-166I GS82032AQ-4I GS820

GSI Technology
Electronic Theatre Controls, Inc.
Part No. GS82032AT-166 GS82032AT-166I GS82032AT-133 GS82032AQ-133I GS82032AT-133I GS82032AQ-166 GS82032AQ-166I GS82032AQ-4I GS82032AQ-5I GS82032AQ-6I GS82032AQ-180I GS82032AT-6I
OCR Text ...rough or pipelined operation ? single cycle deselect (scd) operation ? 3.3 v +10%/?5% core power supply ? 2.5 v or 3.3 v i/o supply ? lbo ...function need not be used. new addresses can be loaded on every cycle with no degradation of chip p...
Description ER 4C 4#16 SKT RECP WALL
64K x 32 / 2M Synchronous Burst SRAM
ER 5C 5#16 PIN RECP WALL
ER 5C 5#16 SKT RECP WALL
AM29BL400B/800B
64K x 32 2M Synchronous Burst SRAM
PROGRAMMER, UNIVERSAL;

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    PBSS303PZ

NXP Semiconductors
Part No. PBSS303PZ
OCR Text ...rence data Conditions open base single pulse; tp 1 ms IC = -4 A; IB = -200 mA [1] Symbol Parameter collector-emitter voltage collector ...function of pulse duration; typical values PBSS303PZ_2 (c) NXP B.V. 2009. All rights reserved....
Description 30 V, 5.3 A PNP low VCEsat (BISS) transistor

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    PBSS303PX

NXP Semiconductors N.V.
Part No. PBSS303PX
OCR Text ...rence data Conditions open base single pulse; tp 1 ms IC = -4 A; IB = -200 mA [1] Symbol Parameter collector-emitter voltage collector ...function of pulse duration; typical values PBSS303PX_2 (c) NXP B.V. 2009. All rights reserved....
Description 30 V, 5.1 A PNP low VCEsat (BISS) transistor 30伏,6安PNP型低饱和压降(BISS)晶体管

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    PBSS303NZ

NXP Semiconductors N.V.
Part No. PBSS303NZ
OCR Text ...rence data Conditions open base single pulse; tp 1 ms IC = 4 A; IB = 200 mA [1] Symbol Parameter collector-emitter voltage collector cu...function of pulse duration; typical values PBSS303NZ_2 (c) NXP B.V. 2009. All rights reserved....
Description 30 V, 5.5 A NPN low VCEsat (BISS) transistor 30伏,5.5安NPN型低饱和压降(BISS)晶体管

File Size 153.54K  /  14 Page

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    PBSS302PZ

NXP Semiconductors N.V.
Part No. PBSS302PZ
OCR Text ...rence data Conditions open base single pulse; tp 1 ms IC = -4 A; IB = -200 mA [1] Symbol Parameter collector-emitter voltage collector ...function of pulse duration; typical values PBSS302PZ_2 (c) NXP B.V. 2009. All rights reserved....
Description 20 V, 5.5 A PNP low VCEsat (BISS) transistor 20伏,5.5安PNP型低饱和压降(BISS)晶体管

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For single-function Found Datasheets File :: 83375    Search Time::3.422ms    
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