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ONSEMI[ON Semiconductor]
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| Part No. |
MGP20N60U_D ON1866 MGP20N60U ON1865
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| OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L ...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
| Description |
IGBT IN TO-220 20 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
116.77K /
5 Page |
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it Online |
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ON Semi
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| Part No. |
MGW20N60D_D ON1924
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| OCR Text |
...60 Vdc, VGE = 15 Vdc, TJ = 25C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient S...142 1.14 - 55 to 150 10 0.88 2.00 45 260 10 lbfSin (1.13 NSm) Unit Vdc Vdc Vdc Adc Apk Watts W/C C
... |
| Description |
IGBT IN TO-47 20 A @ 90 32 A @ 25 600 VOLTS
From old datasheet system
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| File Size |
170.46K /
6 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGY20N120D_D ON1930 MGY20N120D ON1929
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.... |
| Description |
IGBT & DIODE IN TO-264 20 A @ 90 28 A @ 25 1200 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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| File Size |
167.83K /
6 Page |
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it Online |
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SEMIWELL[SemiWell Semiconductor]
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| Part No. |
STP6A60
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| OCR Text |
...
10
10
6V
A
RG
6V
A
RG
6V
A
V
V
V
RG
Test Procedure
Test Procedure
Test P...142
E B
A
H
I
F
C M
G 1 D 2 3
L
1. T1 2. T2 3. Gate
N O
J K
... |
| Description |
Bi-Directional Triode Thyristor
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| File Size |
654.96K /
5 Page |
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it Online |
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ON Semi
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| Part No. |
MGP2N60D_D ON1870
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| OCR Text |
... Adc, VGE = 15 Vdc, L = 300 mH, RG = 10 , TJ = 125C) Energy losses include "tail" Power Supply, ZO = 50 (VCC = 300 Vdc, IC = 1 2 Ad Vdc Vd ...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
| Description |
IGBT 1.5 AMPS 600 VOLTS
From old datasheet system
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| File Size |
74.30K /
4 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
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| Part No. |
MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D
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| OCR Text |
...c, Peak IL = 14 Apk, L = 10 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Tem...142 34 46 56 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 7230 46... |
| Description |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
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| File Size |
232.49K /
8 Page |
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it Online |
Download Datasheet |
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