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ne-18 Datasheet PDF File

For ne-18 Found Datasheets File :: 4080 Search Time::1.625ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M66271FP M66271E
OCR Text	...AY DATA LATCH PULSE F I RST L I NE MARKER SIGNAL LCD ALTERNATING SIGNAL 31 66 67 68 62 43 - MPU DATA BUS D<15:0> 50 53 60 DATA BUFFER - VRAM IOCS MCS HIGH WRITE STROBE HWR LOW W RITE STROBE LWR READ STROBE RD 8...
Description	From old datasheet system OPERATION PANEL CONTROLLER
File Size	287.32K / 21 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	MMPQ2907
OCR Text	...ti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 C...18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X ...
Description	PNP General Purpose Amplifier
File Size	57.01K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	NE4558 NE4558D NE4558N SA4558 SA4558D SA4558N SE4558 SE4558N
OCR Text	NE/SA/SE4558 DESCRIPTION The 4558 is a dual operational amplifier that is internally compensated. Excellent channel separation allows th...18 V V PARAMETER RATING UNIT NOTES: 1. Derate above 25C at the following rates: N package at 9.3m...
Description	Dual general-purpose operational amplifier
File Size	85.67K / 5 Page	View it Online	Download Datasheet

				Philipss PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	NE556F SA556 NE556-1 NE556-1F NE556-1N NE556N SE556N SA556N NE556 SE556 NE556D
OCR Text	NE/SA/SE556/NE556-1 DESCRIPTION Both the 556 and 556-1 Dual Monolithic timing circuits are highly stable controllers capable of producin...18 800 V V mW PARAMETER RATING UNIT NOTES: 1. The junction temperature must be kept below 125C fo...
Description	Dual timer
File Size	103.77K / 5 Page	View it Online	Download Datasheet

				PERICOM[Pericom Semiconductor Corporation]
Part No.	PI6C2516 PI6C2516A
OCR Text	... O utput voltage = VCC or GND O ne input @ VCC 0.6V, other inputs @VCC or GND VCC 3V Min. to Max. 3V Min. to Max. 3V VCC 0.2 2.1 2.4 M in. Typ. 0.79 2.99 2.66 2.83 0.01 0.3 0.15 0.2 0.8 0.55 5 12 4.0 6.0 5.0 500 4.0 A mA pF A V M ax. 1.2 Un...
Description	Phase-Locked Loop Clock Driver with 16 Clock Outputs
File Size	255.35K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon Technologies AG
Part No.	Q62702-F1382 BFP183
OCR Text	...Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.0345 14.772 1.2149 3.4276 0.85331 2.5426 23....18 G 12 3V 2V 3V 2V 16 10 8 14 6 12 1V 4 10 0.7V 1V 0.7V 2 0 8 0 5 10 15...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管（对于低噪声，高增益2毫安0毫安的集电极电流宽带放大器） NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
File Size	60.49K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1492 BFR182W
OCR Text	... Chip Data IS = 4.8499 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 21.742 0.91624 2.2595 0.5641 3.4217 8.8619 22....18 mA IC 26 Semiconductor Group 6 Dec-11-1996 BFR 182W Power Gain Gma, Gms = f(VCE):_...
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1494 BFR280W
OCR Text	...r Chip Data IS = 6.472 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 25.609 1.6163 5.6909 1.0651 14.999 36.218 11.7...18 VCE = Parameter, f = 900MHz 20 0.9GHz 8V 5V 3V 12 2V 8 1V 4 IC=3mA dB dBm G 14 0...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems From old datasheet system
File Size	56.22K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp. NEC, Corp.
Part No.	2SC3356 2SC3356S 2SC3356R24 2SC3356R25 2SC3356R23 2SC3356-VM 2SC3356-T1B 2SC3356-T2B
OCR Text	...0.4 1 0.0 0.4 9 02 -1 .08 20 NE G -1 0. 4 0. 3 07 30 0. 4 0.6 3. 0.8 0 1 0.2 9 0.2 30 0.3 4.0 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 1.0 2.0 GHz 6.0 0.2 10 0.1 20 50 0.25 0.25 ...
Description	For amplify low noise and high frequency MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-346 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管\|晶体管\|叩\| 12V的五（巴西）总裁\| 100mA的一（c）\|的SOT - 346
File Size	100.80K / 8 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SC3357 2SC3357-T2 2SC3357RF 2SC3357-T1
OCR Text	...1 0.0 0.4 9 0.0 2 20 8 -1 NE G -1 0. 4 0. 3 07 30 0. 4 0.6 3. 0.8 0 1 0.2 9 0.2 30 0.3 4.0 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 1.0 6.0 0.2 10 0.1 f = 20 GHz 20 50 0.25 0.25 ...
Description	For amplify high frequency and low noise. NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
File Size	75.76K / 8 Page	View it Online	Download Datasheet

For ne-18 Found Datasheets File :: 4080 Search Time::1.625ms
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