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INTERSIL[Intersil Corporation]
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| Part No. |
FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R1 FSJ163R3 FSJ260R3 FSJ260R4 FSJ160R3 FSJ160R4
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| OCR Text |
...ce applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined w...not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
56.45K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSJ055R4 FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1 FSJ055R3
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| OCR Text |
...ce applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined w...not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-... |
| Description |
70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
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| File Size |
322.95K /
9 Page |
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it Online |
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Microchip Technology, Inc.
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| Part No. |
C1411VUA713 C1411NEUA713 C1411NCOA713
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| OCR Text |
... of electrostatic discharge. as mosfet drivers, the tc1411/tc1411n can easily charge a 1000 pf gate capacitance in 25 nsec with matched rise...not be affected, even by large transients. the leading and trailing edge propagation delay times ar... |
| Description |
1A High-Speed MOSFET Drivers 1A条高速MOSFET驱动
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| File Size |
693.79K /
18 Page |
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it Online |
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Global Mixed-mode Technology Inc.
GMT[Global Mixed-mode Technology Inc]
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| Part No. |
G528P1UF G528 G528A G528AP1U G528AP1UF G528P1U
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| OCR Text |
MOSFET on resistance, at 5.0V 3.0V to 5.5V operating range 100 A typical on-state supply current 1A typical standby supply current Output ca...not exceed the absolute maximum supply voltage (VIN max = 6V) even for a short duration.
3.0V to 5.... |
| Description |
USB High-Side Power Switch Advance Information
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| File Size |
191.47K /
8 Page |
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it Online |
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NXP
Philips
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| Part No. |
BUK101-50GL
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| OCR Text |
...oad protected logic level power mosfet in a 3 pin plastic v ds continuous drain source voltage 50 v envelope, intended as a general i d cont...not exceed v ddp(p) maximum. for further information, refer to overload protection characteristics.... |
| Description |
PowerMOS transistor Logic level TOPFET(功率MOS晶体管逻辑电平TOPFET)
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| File Size |
106.13K /
11 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSF450R4 FSF450D FSF450D1 FSF450D3 FSF450R FSF450R1 FSF450R3
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| OCR Text |
...ce applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined w...not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-... |
| Description |
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
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| File Size |
44.48K /
8 Page |
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it Online |
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